2SD1899L Todos los transistores

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2SD1899L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1899L

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 120 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TO126F

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2SD1899L Datasheet (PDF)

1.1. 2sd1899l.pdf Size:609K _blue-rocket-elect

2SD1899L
2SD1899L

2SD1899L(BR3DA1899LQF) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package. 特征 / Features 饱和压降低,电流大,f 高,极好的放大线性,开关速度快。 T Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. 用途 / Applications

3.1. 2sd1899.pdf Size:291K _nec

2SD1899L
2SD1899L

3.2. 2sd1899-z.pdf Size:56K _transys

2SD1899L

Transys Electronics L I M I T E D TO-252 Plastic-Encapsulated Transistors 2SD1899-Z TRANSISTOR (NPN) TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25?) 2. COLLECTOR Collector current 3. EMITTER ICM: 3 A 1 2 3 Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55? to +150? ELECTRICAL CHARACTERISTIC

3.3. 2sd1899-z.pdf Size:600K _lge

2SD1899L
2SD1899L

2SD1899-Z(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25? unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 3 A

3.4. 2sd1899.pdf Size:577K _lge

2SD1899L
2SD1899L

2SD1899 Transistor(NPN) 1.BASE TO-252-2L 2.COLLECTOR 3.EMITTER Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous

3.5. 2sd1899.pdf Size:608K _wietron

2SD1899L
2SD1899L

2SD1899 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 MAXIMUM RATINGS (TA=25? unless otherwise noted) D-PAK(TO-252) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V V Emitter-Base Voltage VEBO 7 Collector Current -Continuous IC 3 A Collector Power Dissipation PC 1 W Junction Temperature

Otros transistores... 2SC536M , 2SC5371 , 2SC752TM , 2SC945M , 2SD1273AF , 2SD1273F , 2SD1710A , 2SD1710F , 2N3053 , 2SD1936M , 2SD2159 , 2SD2603 , 2SD882B , 2SD882D , 2SD882I , 2SD882L , 2SD882N .

 


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