2SD882B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD882B(BR3DA882BR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SD882NPN medium power transistorFeatures High current Low saturation voltage Complement to 2SB772Applications1 Voltage regulation23 Relay driver SOT-32 Generic switch(TO-126) Audio power amplifier DC-DC converterFigure 1. Internal schematic diagramDescriptionThe device is a NPN transistor manufactured by using planar technology r

2SD882-RMCCMicro Commercial ComponentsTM2SD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SD882-YPhone: (818) 701-49332SD882-GRFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

UTC 2SD882L NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LOW VOLTAGETRANSISTORFEATURES*High current output up to 3A*Low saturation voltage*Complement to 2SB772L APPLICATIONS* Audio power amplifier* DC-DC convertor* Voltage regulatorTO-92L1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETER SYMBOL RATING UNITCollecto

UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR1 1 FEATURES SOT-223 SOT-89* High current output up to 3A * Low saturation voltage * Complement to 2SB772S APPLICATIONS 1* Audio power amplifier TO-92* DC-DC convertor * Voltage regulator ORDERING INFORMATION Order Number Pin Assignment Package Packing

2SB7722SD882PNP / NPN Epitaxial Planar TransistorsTO-126P b Lead(Pb)-Free1.EMITTER2.COLLECTOR3.BASE123ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/2SB772 UnitNPN/2SD882VCEO -30 30 VdcCollector-Emitter VoltageVCBO -40 40 VdcCollector-Base VoltageVEBO -5.0 5.0 VdcEmitter-Base VoltageIC(DC) -3.0 3.0 AdcCollector Current(DC)IC(Pulse) -7.0 7.0 Adc

NPN NPN EPITAXIAL SILICON TRANSISTOR R2SD882 MAIN CHARACTERISTICS Package I 3A CV 30V CEOP (TO-126-FJ) 10W C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit

2SD882I(BR3DA882I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SD882 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SD882N(BR3DA882N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 NPN Silicon NPN transistor in a SOT-223 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage,excellent hFE linearity and high hFE. / Applications 3 ,,

2SD882T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SD882L(BR3DA882L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SD882D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage,excellent hFE linearity and high hFE. / Applications 3 ,,

ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 350 s) ICP 7 AT

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit120 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCES 100 VCollector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 VCollector

ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. ECBTO-126 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 3 ACollector C

ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Value UnitParameterCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 ACollector C

LESHAN RADIO COMPANY, LTD.PNPSURFACEMOUNTTRANSISTORL2SB882Q L2SB882PWe declare that the material of product compliance with RoHS requirements.4 123DEVICE MARKING AND ORDERING INFORMATIONSOT-89Device Marking ShippingL2SB882Q 82Q 2500/Tape&Reel2,4L2SB882P 82P 2500/Tape&ReelCOLLECTOR1MAXIMUM RATINGS(Ta=25C)BASEParameter Symbol Limits Unit3Collector-bas

TransistorsSMD Type TransistorsNPN Silicon Power Transistor2SD882TO-252 Features Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1 Collector Power Dissipation: PC=1.25W+0.85.30+0.2 0.50-0.7-0.2 Collector Current: IC=3A0.1270.80+0.1 max-0.121 32.3 0.60+0.1-0.11 Base+0.154.60-0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

TransistorsSMD Type TransistorsNPN Silicon Power Transistor2SD882TO-252 Features Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1 Collector Power Dissipation: PC=1.25W+0.85.30+0.2 0.50-0.7-0.2 Collector Current: IC=3A0.1270.80+0.1 max-0.121 32.3 0.60+0.1-0.11 Base+0.154.60-0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

SMD Type TransistorsNPN Transistors2SD882A1.70 0.1FeaturesExcellent hFE linearity and high hFEhFE = 60 to 400 (VCE = 2 V, IC = 1 A)0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 70 VCollector to Emitter Voltage VCEO 60 VEmitter to Base Voltage VEBO 6 VCollector Current to Co

CHENMKO ENTERPRISE CO.,LTD2SD882ZGPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-73/SOT-223)SC-73/SOT-223* Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.)1.65+0.15* PC= 1.5 W (mounted on ceramic substrate). 6.50+0

CHENMKO ENTERPRISE CO.,LTD2SD882GPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.5 W (mounted on ceramic substrate).4.6MAX. 1.6MAX.*

www.msksemi.com2SD882-MSSemiconductor CompianceSemiconductor Compiance1. BASE TRANSISTOR (NPN) 2. COLLETOR FEATURES Power dissipation 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC C

www.msksemi.com2SD882Semiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES2Power Dissipation13TO-252-2LMAXIMUM RATINGS (Ta=25 unless otherwise noted)1. BASEUnitSymbolParameter ValueV 40 VCBO Collector-Base Voltage2. COLLECTOR V 30 VCEO Collector-Emitter Voltage3 .EMITTERV 6 VEBO Emitter-Base VoltageI 3 AC Collector Current -

2SD882SQSilicon NPN Power TransistorFeatures. High current output up to 3A Low saturation voltage Complement to 2SB772SQApplicationsPIN1Base PIN 2Collector PIN 3EmitterThese devices are intended for use in audio frequencypower amplifier and low speed switching applications2C1B3EAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter S

D882NPN Transistors Features3 NPN transistor High current output up to 3A2 Low Saturation Voltage Complement to 2SB772 1.Base12.Collector3.Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 6 VCollector

2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 10 ms) ICP 7 AOT

2SD882SQSilicon NPN Power TransistorFeatures. High current output up to 3A Low saturation voltage Complement to 2SB772SQPIN1Base PIN 2Collector PIN 3EmitterApplications2CThese devices are intended for use in audio frequencypower amplifier and low speed switching applications1B3EAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter S

2SD882PNP EPITAXIAL SILICON TRANSISTOR3A, 60V, 2SD882 HD882 TO-126 1000Pcs1K10000Pcs10K8822SD882 Series Pin Assignment2SD882PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LOW VOLTAGE TRANSISTORDESCRIPTIONThe

isc Silicon NPN Power Transistor 2SD882DESCRIPTIONHigh Collector Current-I = 3.0ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2.0A, I = 0.2ACE(sat) C BGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuited for the output stage of 3 watts audio amplifier,voltage regulator, DC-DC converter and r

isc Silicon NPN Power Transistor 2SD882U-PDESCRIPTIONHigh Collector Current-I = 3.0ACLow Saturation Voltage -: V = 0.8V(Max)@ I = 2.0A, I = 0.2ACE(sat) C BGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for used in medium power linearand switching applicationsABSOLUTE MAXIMUM RATINGS(T