8050T
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 8050T
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 1.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 9
pF
Ganancia de corriente contínua (hfe): 85
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar 8050T
8050T
Datasheet (PDF)
..1. Size:848K blue-rocket-elect
8050t.pdf 
8050T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features 8550T Complementary pair with 8550T. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 1 2
0.1. Size:386K secos
s8050t.pdf
S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TO-92FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current: IC = 0.5 A 1 2 32.54 0.11: Emitter2: Base3: Collector0.080.43 0.070.46 0.1ABSOLUTE MAXIMUM RATINGS at Ta = 25C
0.2. Size:105K secos
ss8050t.pdf
SS8050TNPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92FEATURESPower dissipationPCM : 1 WCollector CurrentICM : 1.5 A1Collector-base voltage 23V(BR)CBO : 40 V12 3Operating & storage junction temperature1O OTj, Tstg : - 55 C ~ + 150 C1. EMITTER22. BASS3 . COLLEC
0.3. Size:636K slkor
s8050tl s8050th s8050tj.pdf
S8050TNPN TransistorsMarkingMarking J3Y32 1.Base2.Emitter3.Collector1 Simplified outline(SOT-523) Absolute Maximum Ratings Ta = 25Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 0.5 APC Collector Dissipation 0.2 WTj Junction Temperature 150
0.4. Size:694K cn cbi
s8050t.pdf
S8050T TRANSISTOR (NPN) SOT-523 FEATURES Complimentary to S8550T1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 0.5 APC Collector Diss
0.5. Size:545K cn me-tech
ss8050t23.pdf
SS8050T23NPN Transistor ROHS FEATURE NPN Transistor Collector Current: IC=1.5A MARKING:Y1SOT-23Absolute maximum ratings (Ta=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 1.5 APC Collector Power Dissipation 0.3 W Tj
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