KTC3199M Todos los transistores

KTC3199M(BR3DG3199M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , h , FE High DC current gain, excellent hFE linearity, low noise / Applications General amplifier

KTC3199-O MCC Micro Commercial Components TM KTC3199-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 KTC3199-GR Phone (818) 701-4933 Fax (818) 701-4939 KTC3199-BL Features High DC Current Gain hFE=70 700 NPN General Excellent hFE Linearity hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) Low Noise NF=1.0dB(Typ.), 10dB(Max.) Purpose Application Compl

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S KTC3199 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High DC Current Gain 3. BASE Complementary to KTA1267 1 2 3 Equivalent Circuit C3199 C3199=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORM

SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES High DC Current Gain hFE=70 700. Excellent hFE Linearity DIM MILLIMETERS O A 3.20 MAX hFE(0.1mA)/hFE(2mA)=0.95(Typ.). H M B 4.30 MAX C 0.55 MAX Low Noise NF=1dB(Typ.), 10dB(Max.). _ D 2.40 + 0.15 E 1.27 Complementary to KTA1267. F 2.30

SEMICONDUCTOR KTC3199L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B High DC Current Gain hFE=70 700. Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS O A 3.20 MAX Low Noise NF=0.2dB(Typ.), 3dB(Max.). H M B 4.30 MAX C 0.55 MAX Complementary to KTA1267L. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ +