2N6464
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6464
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 250
V
Tensión colector-emisor (Vce): 250
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO39
Búsqueda de reemplazo de transistor bipolar 2N6464
2N6464
Datasheet (PDF)
..1. Size:11K semelab
2n6464.pdf 
2N6464Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 250V dia.IC = 0.1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
9.2. Size:11K semelab
2n6462.pdf
2N6462Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 300V dia.IC = 0.1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
9.3. Size:11K semelab
2n6463.pdf
2N6463Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 250V dia.IC = 0.1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
9.4. Size:10K semelab
2n6465.pdf
2N6465Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 110V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
9.5. Size:10K semelab
2n6466.pdf
2N6466Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 130V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
9.6. Size:10K semelab
2n6468.pdf
2N6468Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 130V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
9.7. Size:11K semelab
2n6461.pdf
2N6461Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 300V dia.IC = 0.1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
9.8. Size:10K semelab
2n6467.pdf
2N6467Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 110V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
9.9. Size:125K inchange semiconductor
2n6467 2n6468.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6467 2N6468 DESCRIPTION With TO-66 package Excellent safe operating area Complement to type 2N6465 2N6466 APPLICATIONS For use in audio amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximum rati
9.10. Size:116K inchange semiconductor
2n6469.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6469 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol
9.11. Size:125K inchange semiconductor
2n6465 2n6466.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6465 2N6466 DESCRIPTION With TO-66 package Excellent safe operating area Complement to type 2N6467 2N6468 APPLICATIONS For use in audio amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum rat
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