MMBR911 Todos los transistores

MMBR911(BR3DG911M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low noise, high gain. / Applications High frequency amplifier applications. / Equivalent Circuit /

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR911LT1/D The RF Line MMBR911LT1 NPN Silicon MPS911 High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers and low noise VCO s. Available in a surface mountable plastic package, as well as IC = 60 mA the popular TO 226AA (TO 92) package. This Motorola series of small sig

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high gain, low noise small signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR951ALT1/D The RF Line MMBR951 NPN Silicon MRF951 Low Noise, High-Frequency MRF957 Transistors MRF9511 Designed for use in high gain, low noise small signal amplifiers. This series SERIES features excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR931LT1/D The RF Line NPN Silicon MMBR931LT1 High-Frequency Transistor Designed primarily for use in low power amplifiers to 1.0 GHz. Ideal for pagers and other battery operated systems where power consumption is critical. Available in tape and reel packaging options T1 suffix = 3,000 units per reel RF AMPLIFIER

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR920LT1/D The RF Line NPN Silicon MMBR920LT1, T3 High-Frequency Transistor . . . designed for thick and thin film circuits using surface mount components and requiring low noise, high gain signal amplification at frequencies to 1.0 GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR920LT1/D The RF Line NPN Silicon MMBR920LT1 High-Frequency Transistor Designed for thick and thin film circuits using surface mount components and requiring low noise, high gain signal amplification at frequencies to 1.0 GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB Typ @ f =