MMBR911
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBR911
Código: 7P
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.333
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 12
V
Tensión emisor-base (Veb): 2
V
Corriente del colector DC máxima (Ic): 0.06
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 6000
MHz
Capacitancia de salida (Cc): 1
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar MMBR911
MMBR911
Datasheet (PDF)
..1. Size:688K blue-rocket-elect
mmbr911.pdf 
MMBR911(BR3DG911M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low noise, high gain. / Applications High frequency amplifier applications. / Equivalent Circuit /
0.1. Size:158K motorola
mps911 mmbr911lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR911LT1/DThe RF LineMMBR911LT1NPN SiliconMPS911High-Frequency TransistorsDesigned for low noise, wide dynamic range frontend amplifiers andlownoise VCOs. Available in a surfacemountable plastic package, as well asIC = 60 mAthe popular TO226AA (TO92) package. This Motorola series of smallsig
9.1. Size:267K motorola
mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR901LT1/DThe RF LineMMBR901LT1, T3NPN SiliconMPS901 MRF901High-Frequency TransistorMRF9011LT1Designed primarily for use in highgain, lownoise smallsignal amplifiers foroperation up to 2.5 GHz. Also usable in applications requiring fast switchingtimes. High CurrentGain Bandwidth ProductIC
9.2. Size:330K motorola
mmbr951 mrf951 mrf957 mrf9511.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR951ALT1/DThe RF LineMMBR951NPN SiliconMRF951Low Noise, High-FrequencyMRF957TransistorsMRF9511Designed for use in high gain, low noise smallsignal amplifiers. This seriesSERIESfeatures excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure
9.3. Size:53K motorola
mmbr931l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR931LT1/DThe RF LineNPN SiliconMMBR931LT1High-Frequency TransistorDesigned primarily for use in lowpower amplifiers to 1.0 GHz. Ideal forpagers and other battery operated systems where power consumption iscritical. Available in tape and reel packaging options:T1 suffix = 3,000 units per reelRF AMPLIFIER
9.4. Size:54K motorola
mmbr920l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR920LT1/DThe RF LineNPN SiliconMMBR920LT1, T3High-Frequency Transistor. . . designed for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB
9.5. Size:54K motorola
mmbr920 .pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR920LT1/DThe RF LineNPN SiliconMMBR920LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB Typ @ f =
9.6. Size:386K motorola
mrf941 mmbr941lt1 mrf9411lt1 mrf947.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR941LT1/DThe RF LineMMBR941NPN SiliconMRF941Low Noise, High-FrequencyMRF947TransistorsMRF9411Designed for use in high gain, low noise smallsignal amplifiers. This seriesfeatures excellent broadband linearity and is offered in a variety of packages.SERIES Fully Implanted Base and Emitter Structure
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