PH2369M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PH2369M  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 4.5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 500 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT23

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PH2369M datasheet

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PH2369M

PH2369M(BR3DG2369M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low current, low voltage. / Applications High-speed switching. / Equivalent Circuit / Pinning 3 2

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PH2369M

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 PH2369 NPN switching transistor Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 27 NXP Semiconductors Product data sheet NPN switching transistor PH2369 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 15 V). 1 emitter 2 base APPLICATIONS 3 collector High-speed switc

 8.2. Size:51K  philips
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PH2369M

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2369 NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 May 27 Philips Semiconductors Product specification NPN switching transistor PH2369 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 15 V). 1 emitter 2 base APPLICATIONS 3 collector High-spe

 8.3. Size:219K  lge
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PH2369M

PH2369 TO-92 Transistor (NPN) TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current Continuous 0.2 A Dimensions in inches and (millimeters) PC Collector

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