S8050A Datasheet. Equivalente

 ..1. Size:292K  gsme
 s8050a.pdf

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )

 ..2. Size:420K  blue-rocket-elect
 s8050a.pdf

S8050A(BR3DG8050AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features PC, IC , S8550A(BR3CG8550AK) High PC and IC, complementary pair with S8550A(BR3CG8550AK). / Applications Amplifier of portable radios in class B pu

 0.1. Size:253K  cn haohai electr
 hs8050 hs8050a hm8050 hmbt8050 hss8050 hmc6802.pdf

HMBT8050 NPN-TRANSISTOR NPN, 8050 NPN NPN Plastic-Encapsulate Transistors SMD HS8050, HS8050A HM8050, HMBT8050 High breakdown voltage Low collector-emitter saturation voltage HSS8050, HMC6802 Complementary to HMBT8550 Transistor Polarity NPN

 9.1. Size:331K  fairchild semi
 fdms8050.pdf

August 2014 FDMS8050 N-Channel PowerTrench MOSFET 30 V, 200 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 A improve the overall efficiency and to minimize switch node Max rDS(on) = 0.9 m at VGS = 4.5 V, ID = 47 A ringing of DC/DC converters using either synchronous or Advanced P

 9.2. Size:316K  fairchild semi
 fdms8050et30.pdf

January 2015 FDMS8050ET30 N-Channel PowerTrench MOSFET 30 V, 423 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Extended TJ rating to 175 C improve the overall efficiency and to minimize switch node Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 A ringing of DC/DC converters using either synchronous or conventional switching PWM

 9.3. Size:157K  fairchild semi
 ss8050.pdf

July 2010 SS8050 NPN Epitaxial Silicon Transistor Features 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current IC=1.5A Collector Power Dissipation PC=2W (TC=25 C) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collecto

 9.4. Size:62K  samsung
 ss8050.pdf

SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8550 Collector Current IC=1.5A Collector Dissipation PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6

 9.5. Size:174K  mcc
 mmss8050-h.pdf

MCC MMSS8050-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5A Plastic-Encapsulate Collector-base Voltage 40V Operat

 9.6. Size:181K  mcc
 mms8050-l.pdf

MCC MMS8050-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS8050-H Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating

 9.7. Size:222K  mcc
 s8050b s8050c s8050d.pdf

MCC Micro Commercial Components TM S8050-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8050-C Phone (818) 701-4933 Fax (818) 701-4939 S8050-D Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating an

 9.8. Size:268K  mcc
 mmss8050-l mmss8050-h.pdf

MCC MMSS8050-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5A Plastic-Encapsulate Collector-base Voltage 40V Operatin

 9.9. Size:181K  mcc
 mms8050-h.pdf

MCC MMS8050-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS8050-H Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating

 9.10. Size:218K  mcc
 ms8050-l.pdf

MCC Micro Commercial Components MS8050-L TM 20736 Marilla Street Chatsworth Micro Commercial Components MS8050-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage 40V Operating an

 9.11. Size:218K  mcc
 ms8050-h.pdf

MCC Micro Commercial Components MS8050-L TM 20736 Marilla Street Chatsworth Micro Commercial Components MS8050-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage 40V Operating an

 9.12. Size:174K  mcc
 mmss8050-l.pdf

MCC MMSS8050-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5A Plastic-Encapsulate Collector-base Voltage 40V Operat

 9.13. Size:286K  mcc
 mmss8050w-h-j-l.pdf

MMSS8050W-L MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050W-H CA 91311 Phone (818) 701-4933 MMSS8050W-J Fax (818) 701-4939 Features SOT-323 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.2 Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5A Plastic-Encapsulate Collector-base Voltage 4

 9.14. Size:366K  mcc
 mms8050.pdf

MMS8050 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 NPN Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Plastic-Encapsulate Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Transistor Operating Junction Tempera

 9.15. Size:179K  mcc
 ss8050-c-d.pdf

MCC Micro Commercial Components TM SS8050-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SS8050-D Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 1.5A Collector-base Voltage 40V Transistors Operating and storag

 9.16. Size:370K  onsemi
 fdms8050.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.17. Size:237K  onsemi
 ss8050.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.18. Size:173K  utc
 s8050.pdf

UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC S8050 is a low voltage high current small signal 1 NPN transistor, designed for Class B push-pull audio amplifier TO-92 and general purpose applications. FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V

 9.19. Size:199K  auk
 sps8050.pdf

SPS8050 Semiconductor Semiconductor NPN Silicon Transistor Features Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance RON=0.6 (Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S

 9.20. Size:237K  auk
 sts8050.pdf

STS8050 NPN Silicon Transistor Descriptions PIN Connection High current application C Radio in class B push-pull operation B Feature E Complementary pair with STS8550 TO-92 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Absolute Maximum Ratings (Ta=25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 30 V C

 9.21. Size:192K  secos
 s8050.pdf

S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8550 B 1.200 1.400 1 Base C 0.890 1.110 2 Collector Current IC=0.5A Emitter D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600

 9.22. Size:386K  secos
 s8050t.pdf

S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current IC = 0.5 A 1 2 3 2.54 0.1 1 Emitter 2 Base 3 Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25 C

 9.23. Size:258K  secos
 ss8050w.pdf

SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO 40 V S To

 9.24. Size:105K  secos
 ss8050t.pdf

SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM 1 W Collector Current ICM 1.5 A 1 Collector-base voltage 2 3 V(BR)CBO 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg - 55 C + 150 C 1. EMITTER 2 2. BASS 3 . COLLEC

 9.25. Size:310K  secos
 ss8050.pdf

 9.26. Size:1448K  jiangsu
 s8050.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S8050 TRANSISTOR (NPN) FEATURES 1.EMITTER Complimentary to S8550 Collector current IC=0.5A 2.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emit

 9.27. Size:515K  jiangsu
 ss8050.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 SS8050 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. BASE Power Dissipation 3. COLLECTOR PCM 1 W (TA=25.) 2 W (TC=25.) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEB

 9.28. Size:610K  kec
 mps8050sc.pdf

SEMICONDUCTOR MPS8050SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8550SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1,200 mA PC * Collector Power Dissipation 350 mW Tj Junction Te

 9.29. Size:351K  kec
 mps8050s.pdf

SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8550S. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 0.10 Q L 0.55 VCBO P P Co

 9.30. Size:68K  kec
 mps8050.pdf

SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to MPS8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 25 V _ H J 14.00 + 0.

 9.31. Size:907K  htsemi
 s8050.pdf

S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current IC=0.8A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.8 A PC Collector

 9.32. Size:1374K  htsemi
 ss8050.pdf

SS8 050 SOT-23 TRANSISTOR(NPN) FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector

 9.33. Size:292K  gsme
 s8050.pdf

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )

 9.34. Size:292K  gsme
 ss8050.pdf

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )

 9.35. Size:1527K  lge
 s8050.pdf

S8050 Silicon Epitaxial Planar Transistor FEATURES A SOT-23 High Collector Current.(IC= 500mA). Dim Min Max A 2.70 3.10 E Complementary To S8550. B 1.10 1.50 K B C 1.0 Typical Excellent HFE Linearity. D 0.4 Typical E 0.35 0.48 J High total power dissipation.(PC=300mW). D G 1.80 2.00 G H 0.02 0.1 J 0.1 Typical H APPLICATIONS K 2.20 2.60 C All Dimensions in mm

 9.36. Size:566K  lge
 s8050 to-92.pdf

S8050(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current IC=0.5A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in

 9.37. Size:208K  lge
 s8050 sot-23.pdf

S8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current IC=0.5A MARKING J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collect

 9.38. Size:168K  lge
 ss8050 to-92.pdf

SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM 1 W (TA=25 ) 2 W (TC=25 ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC C

 9.39. Size:723K  lge
 ss8050.pdf

SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM 1 W (TA=25 ) 2 W (TC=25 ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector

 9.40. Size:323K  lge
 ss8050 sot-23.pdf

SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A

 9.41. Size:2028K  wietron
 s8050.pdf

S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temper

 9.42. Size:223K  wietron
 ss8050.pdf

SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25 C PD W 1.0 TJ,Tstg Junction

 9.43. Size:165K  wietron
 ss8050lt1.pdf

SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 1500 300 2.4 417 0.1 25 40 100 5.0 100 u 0.15 35 0.15 u 4.0 WEITRON 27-Jul-2012 1/2 http //www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gai

 9.44. Size:180K  shenzhen
 s8050.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM 0.625 W (Tamb=25 ) 3. COLLECTOR Collector current ICM 0.5 A Collector-base voltage 1 2 3 V(BR)CBO 40 V Operating and storage junction temperature range TJ, Tstg -55 to +150

 9.45. Size:262K  shenzhen
 s8050lt1.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8050LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM 0.5 A Collector-base voltage V(BR)CBO 40 V Unit mm Operating and storage junction temperature range TJ, Tstg

 9.46. Size:752K  shenzhen
 ss8050.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM 1 W (TA=25 ) 3. COLLECTOR 2 W (TC=25 ) 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Volt

 9.47. Size:961K  shenzhen
 ss8050lt1.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.3 W ( Tamb=25 ) 1. 3 Collector current ICM 1.5 A Collector-base voltage V(BR)CBO 25 V Operating and storage junction temperature range Unit mm TJ, Tst

 9.48. Size:260K  can-sheng
 s8050 sot-23 8325.pdf

 9.49. Size:251K  can-sheng
 s8050 to-92.pdf

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current Ic=0.5A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO

 9.50. Size:550K  can-sheng
 ss8050 y1 sot-23.pdf

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base

 9.51. Size:284K  can-sheng
 ss8050.pdf

TO-92 Plastic-Encapsulate Transistors FEATURES TO-92 Power dissipation PCM 1 W (TA=25 ) 1.EMITTER 2 W (TC=25 ) 2.BASE MAXIMUM RATINGS 3.COLLECTOR MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units VCBO 40 V VCBO VCBO Co

 9.52. Size:885K  blue-rocket-elect
 s8050.pdf

 9.53. Size:874K  blue-rocket-elect
 s8050m.pdf

S8050M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features S8550M Complementary pair with S8550M. / Applications Power amplifier applications. / Equivalent Circuit / Pinnin

 9.54. Size:875K  blue-rocket-elect
 s8050mg.pdf

S8050MG Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features S8550MG Complementary pair with S8550MG.HF Product. / Applications Power amplifier applications. / Equivalent Ci

 9.55. Size:904K  blue-rocket-elect
 s8050w.pdf

S8050W(BR3DG8050W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features S8550W(BR3CG8550W) Complementary pair with S8550W(BR3CG8550W). / Applications Power amplifier applications. / Equivalent Cir

 9.56. Size:423K  first silicon
 ss8050g.pdf

SS8050G Plastic-Encapsulate Transistors Simplified outline SS8050G TRANSISTOR NPN TO-92 Features Power Dissipation 1.EMITTER PCM 1 W (TA=25.) 2.BASE 2 W (TC=25.) 3.COLLECTOR 123 Maximum Ratings(T a=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC

 9.57. Size:361K  first silicon
 s8050g.pdf

S8050G Plastic-Encapsulate Transistors Simplified outline S8050G TRANSISTOR NPN TO-92 Features Power dissipation 1.EMITTER PCM 0.625 W Tamb=25 2. COLLECTOR Collector current ICM 0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO 40 V Operating and storage junction temperature range TJ Tstg -55 to +150 Electrical Characteristics

 9.58. Size:290K  feihonltd
 s8050daf.pdf

 9.59. Size:284K  feihonltd
 s8050sdb.pdf

 9.60. Size:900K  feihonltd
 s8050da.pdf

IC 1.5A Epitaxial silicon VCEO 45V High switching speed PC 1W S8550DA Complementary to S8550DA RoHS RoHS product High frequency switch power supply Commonly power amplifier circuit High frequency power transform TO-92

 9.61. Size:478K  feihonltd
 s8050d.pdf

 9.62. Size:199K  galaxy
 ss8050.pdf

Product specification NPN Silicon Epitaxial Planar Transistor SS8050 FEATURES Pb Collector Current.(I = 1.5A C Lead-free Complementary To SS8550. Collector dissipation P =300mW(T =25 ) C C APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code SS8050 Y1 SOT-23 none is for Lead Free package;

 9.63. Size:183K  globaltech semi
 gstss8050.pdf

GSTSS8050 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 25V amplifier and switch. Collector Current 1.5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Base 3 Collector Marking Information P/N Package Rank Part Marking GSTSS8050F TO-92 (B) / (C) / (

 9.64. Size:187K  globaltech semi
 gstss8050lt1.pdf

GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 25V amplifier and switch. Collector-Base Voltage 40V Collector Current 1500mA Lead(Pb)-Free Packages & Pin Assignments SOT-23 Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Markin

 9.65. Size:493K  kodenshi
 ks8050l.pdf

KS8050L NPN Silicon Transistor Descriptions PIN Connection High current application Features Complementary pair with KS8550L Ordering Information Type NO. Marking Package Code KK KS8050L SOT-23 Device Code HFE Grade Year& Week Code AUK Dalian SOT-23 Absolute maximum ratings Ta=25 C Characteristic Symbol Ratings Unit Colle

 9.66. Size:631K  slkor
 ss8050-l ss8050-h ss8050-j.pdf

SS8050 TRANSISTOR(NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperat

 9.67. Size:2166K  slkor
 s8050b s8050c s8050d.pdf

S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temper

 9.68. Size:636K  slkor
 s8050tl s8050th s8050tj.pdf

S8050T NPN Transistors Marking Marking J3Y 3 2 1.Base 2.Emitter 3.Collector 1 Simplified outline(SOT-523) Absolute Maximum Ratings Ta = 25 Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.2 W Tj Junction Temperature 150

 9.69. Size:817K  slkor
 s8050w-l s8050w-h s8050w-j.pdf

S8050W TRANSISTOR (NPN) FEATURES SOT-323 Complimentary to S8550 W Collector Current IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Diss

 9.70. Size:1865K  slkor
 ss8050w.pdf

SS8050W NPN Transistors Features 3 High Collector Current Complementary to SS8550W 2 1.Base 2.Emitter 3.Collector 1 Simplified outline(SOT-323) Absolute Maximum Ratings Ta = 25 Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissip

 9.71. Size:969K  umw-ic
 s8050l s8050h.pdf

R UMW S8050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC C

 9.72. Size:365K  umw-ic
 ss8050l ss8050h ss8050j.pdf

R UMW UMW SS8050 SOT-23 Plastic-Encapsulate Transistors SOT-23 SS8050 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti

 9.73. Size:1021K  anbon
 s8050.pdf

S8050 General Purpose Transistors NPN Silicon Package outline Features High current capacity in compact package IC = 0.5A. SOT-23 Epitaxial planar type Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. S8050-H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.32) 0.108 (2.75) Mechanical data 0.083 (2.10) Epoxy UL94-V0 r

 9.74. Size:1198K  anbon
 ss8050.pdf

SS8050 General Purpose Transistors NPN Silicon Features Package outline High current capacity in compact package IC = 1.5A. Epitaxial planar type SOT-23 Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. SS8050-H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.32) 0.108 (2.75) Mechanical data 0.083 (2.10) Epoxy UL94-V0 r

 9.75. Size:968K  born
 s8050.pdf

S8050 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complimentary to S8550 Collector Current IC=0.5A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Value Symbol Units 1. BASE 40 VCBO Collector-Base Voltage V 2. EMITTER 25 VCEO Collector-Emitter Voltage V 3. COLLECTOR VEBO Emit

 9.76. Size:1924K  born
 ss8050.pdf

SS8050 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS Features SOT-23 High Collector Current Complementary to SS8550 Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO 1. BASE VCEO Collector-Emitter Voltage 25 V 2. EMITTER 3. COLLECTOR VEBO Emitter-Ba

 9.77. Size:5951K  fuxinsemi
 s8050.pdf

S8050 General Purpose Transistors NPN Silicon FEATURES Complimentary to S8550 SOT-23 MARKING J3Y MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO VCE Collector-Emitter Voltage 25 V O V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipation 300 mW C R Thermal Resistance F

 9.78. Size:5560K  fuxinsemi
 ss8050.pdf

SS8050 General Purpose Transistors NPN Silicon FEATURES Complimentary to SS8550 SOT-23 MARKING Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO VCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBO I Collector Current 1.5 A C P Collector Power Dissipation 300 mW C R Thermal Resistance F

 9.79. Size:659K  fms
 ss8050.pdf

NPN SMD Transistors Formosa MS SS8050 General Purpose Transistors NPN Silicon Package outline SOT-23 Features High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. SS8050-H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.32) 0.108 (2.75) Mechanical data

 9.80. Size:1902K  high diode
 s8050.pdf

S8050 HD-ST0.4 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Complimentary to S8550 Collector Current IC=0.5A Marking J3Y Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V V Collector-Emitter Voltage 25 V CEO C V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipation 300 mW

 9.81. Size:2109K  high diode
 ss8050.pdf

SS8050 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Complimentary to SS8550 Collector Current IC=1.5A Marking Y1 Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V V Collector-Emitter Voltage 25 V CEO C V Emitter-Base Voltage 5 V EBO I Collector Current C 1.5 A P Collector Power Dissipation 300 mW C B E

 9.82. Size:767K  jsmsemi
 s8050.pdf

S8050 NPN Silicon General Purpose Transistor TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550 1.25 0.2 Collector Current IC = 0.5 A 1 2 3 2.54 0.1 1 Emitter 2 Base 3 Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25 C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitt

 9.83. Size:696K  jsmsemi
 ss8050.pdf

SS8050 Silicon Epitaxial Planar Transistor FEATURES Collector Current.(I = 1.5A C Complementary To SS8550. Collector Power Dissipation P =2W(T =25 ) C C APPLICATIONS High Collector Current. TO-92 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Ratings Units Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 25

 9.84. Size:601K  mdd
 s8050.pdf

S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector

 9.85. Size:1436K  mdd
 ss8050.pdf

SS8 050 SOT-23 TRANSISTOR(NPN) FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector

 9.86. Size:3792K  msksemi
 ss8050-ms.pdf

www.msksemi.com SS8050-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complimentary to SS8550-MS 1. BASE MARKING Y1 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector

 9.87. Size:4125K  msksemi
 s8050-ms.pdf

www.msksemi.com S8050-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complimentary to S8550-MS Collector Current IC=0.5A 1. BASE 2. EMITTER MARKING J3Y SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Ba

 9.88. Size:160K  powersilicon
 s8050l-t3 s8050h-t3.pdf

 9.89. Size:197K  powersilicon
 ss8050.pdf

SS8050 PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES Collector Current IC = 1.5A C E B MECHANICAL DATA Available in SOT-23, SOT-323, TO-92 Package C Solderability MIL-STD-202, Method 208 E Full RoHS Compliance B E B C ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE SS8050 - -T3 SOT-23 Tape Reel Y1 SS8050 - -

 9.90. Size:961K  cn evvo
 s8050.pdf

S8050 S8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to S8550 Collector Current IC=0.5A 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emitter Base Voltage VEBO 5 V 500 mA Collector Current Continuous IC mW Collect

 9.91. Size:942K  cn evvo
 ss8050.pdf

SS8050 SS8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to SS8550 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emitter Base Voltage VEBO 5 V 1.5 A Collector Current Continuous IC mW Collector Power Dissipation PC 300

 9.92. Size:1291K  cn salltech
 s8050-l s8050-h s8050-j.pdf

S8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8550 ; Complementary to S8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

 9.93. Size:796K  cn shandong jingdao microelectronics
 ss8050-l ss8050-h ss8050-j.pdf

Jingdao Microelectronics co.LTD SS8050 SS8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to SS8550 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emitter Base Voltage VEBO 5 V

 9.94. Size:785K  cn shandong jingdao microelectronics
 s8050-l s8050-h s8050-j.pdf

Jingdao Microelectronics co.LTD S8050 S8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to S8550 Collector Current IC=0.5A 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emi

 9.95. Size:2083K  cn puolop
 ss8050-l ss8050-h ss8050-j.pdf

SS8 050 SOT-23 TRANSISTOR(NPN) FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector

 9.96. Size:1239K  cn puolop
 s8050-l s8050-h.pdf

S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complementary to S8550 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector

 9.97. Size:789K  cn shikues
 s8050l s8050h.pdf

 9.98. Size:785K  cn shikues
 ss8050.pdf

 9.99. Size:780K  cn shikues
 ss8050w-l ss8050w-h ss8050w-j.pdf

SS8050W SS8050W TRANSISTOR (NPN) FEATURES Complimentary to SS8550W MARKING Y1 SOT 323 3. COLLECTOR 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0

 9.100. Size:303K  wpmtek
 s8050.pdf

Integrated in OVP&OCP products provider S8050 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.8A 1 BASE 2 EMITTER 3 COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collecto

 9.101. Size:658K  wpmtek
 ss8050.pdf

Integrated in OVP&OCP products provider SS8050 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Vol

 9.102. Size:476K  cn yfw
 s8050 s8050l s8050h s8050j.pdf

S8050 SOT-23 NPN Transistors 3 2 1.Base 2.Emitter 1 3.Collector Features Collector Current IC=0.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.5 A Collector Dissipation PC 0.3 W Junction Tempe

 9.103. Size:386K  cn yfw
 ss8050 ss8050-l ss8050-h ss8050-j.pdf

SS8050 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Collector Current IC=1.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1.5 A Collector Dissipation PC 0.3 W Junction Tempera

 9.104. Size:1034K  cn yongyutai
 s8050.pdf

 9.105. Size:1588K  cn yongyutai
 ss8050.pdf

 9.106. Size:1170K  cn yongyutai
 ss8050l ss8050h ss8050j.pdf

SS8050 TRANSISTOR (NPN) SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO VCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBO I Collector Current 1.5 A C P Collector Power Dissipation 250 mW C R Therm

 9.107. Size:941K  cn zre
 s8050l s8050h s8050j.pdf

S8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8550 ; Complementary to S8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

 9.108. Size:1002K  cn zre
 ss8050l ss8050h ss8050j.pdf

SS8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8550 ; Complementary to SS8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

 9.109. Size:1754K  cn twgmc
 s8050.pdf

S8050 S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 SOT-23 Collector Current IC=0.5A 1 BASE 2 EMITTER MARKING J3Y 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collecto

 9.110. Size:1793K  cn twgmc
 ss8050.pdf

SS8050 SS8050 TRANSISTOR (NPN) SS8050 FEATURES Complimentary to SS8550 SOT-23 1 BASE MARKING Y1 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0

 9.111. Size:9568K  cn twgmc
 ss8050w-l ss8050w-h ss8050w-j.pdf

SS8050W SS8050W SS8050W SS8050W TRANSISTOR(NPN) SS8 0 50 W SOT 323 3 FEATURES Complimentary to SS8550W 1. BASE 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Co

 9.112. Size:316K  cn yangzhou yangjie elec
 s8050-l s8050-h.pdf

RoHS RoHS COMPLIANT COMPLIANT S8050-L THRU S8050-H NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking S8050-L J3Y L S8050-H J3Y Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Coll

 9.113. Size:320K  cn yangzhou yangjie elec
 ss8050-l ss8050-h.pdf

RoHS COMPLIANT SS8050-L THRU SS8050-H NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 9

 9.114. Size:2282K  eicsemi
 s8050.pdf

TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com S8050 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current IC=0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-B

 9.115. Size:1462K  cn dowo
 ss8050-1.5a.pdf

SS8050-1.5A NPN Transistor Features SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code Y1 1.Base 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBO Collector Emitter Voltage V 25 V CEO

 9.116. Size:853K  cn doeshare
 s8050.pdf

S8050 S8050 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S8550 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking J3Y Maximum Ratings & Thermal Characteristics TA = 25 C unle

 9.117. Size:1042K  cn doeshare
 ss8050.pdf

SS8050 SS8050 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to SS8550 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking Y1 Maximum Ratings & Thermal Characteristics TA = 25 C un

 9.118. Size:334K  cn cbi
 s8050.pdf

S8050 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector

 9.119. Size:694K  cn cbi
 s8050t.pdf

S8050T TRANSISTOR (NPN) SOT-523 FEATURES Complimentary to S8550T 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Diss

 9.120. Size:625K  cn cbi
 ss8050w.pdf

 9.121. Size:327K  cn cbi
 ss8050.pdf

 9.122. Size:119K  cn fh
 s8050.pdf

GUANGDONG FENGHUA SEMICONDUCTOR TECHNOLOGY CO.,LTD S8050 10 NPN Transistor NO.10,2nd Nanxiang Road, Guangzhou Science Park,Guangzhou City,Guangdong Province,China. Applications . General purpose application switching

 9.123. Size:510K  cn fosan
 s8050.pdf

 9.124. Size:1055K  cn fosan
 ss8050.pdf

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD SS8050 FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to SS8550 SS8550 (Ta=25 ) CHARACTERISTIC Symbol Rating Unit Collector-Base Voltage VCB

 9.125. Size:2094K  cn goodwork
 s8050.pdf

S8050 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V. Collector current IC=0.5A. ansition frequency fT>150MHz @ Tr IC=20mAdc, VCE=6Vdc, f=30MHz. In compliance with EU RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Soldera

 9.126. Size:2053K  cn goodwork
 ss8050.pdf

SS8050 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V. Collector current IC=1.5A. ansition frequency fT>100MHz @ Tr IC=50mAdc, VCE=10Vdc, f=30MHz. In compliance with EU RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Solde

 9.127. Size:621K  cn hottech
 s8050.pdf

S8050 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to S8550 Excellent h Linearity FE High Collector Current Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol

 9.128. Size:747K  cn hottech
 ss8050.pdf

SS8050 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to SS8550 High Collector Current Surface Mount device SOT-323 MECHANICAL DATA Case SOT-323 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base

 9.129. Size:610K  cn idchip
 s8050.pdf

NPN S8050 S8050 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Volt

 9.130. Size:603K  cn idchip
 ss8050.pdf

NPN SS8050 SS8050 TRANSISTOR (NPN) SOT-23 FEATURES Complimentary to SS8550 1 BASE 2 EMITTER 3 COLLECTOR MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Cu

 9.131. Size:1818K  cn juxing
 s8050.pdf

S8050 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector Current IC=0.5A MARKING J3Y MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO SOT-23 V Collector-Emitter Voltage 25 V CEO VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA 1. BASE 2. EMITT

 9.132. Size:545K  cn me-tech
 ss8050t23.pdf

SS8050T23 NPN Transistor ROHS FEATURE NPN Transistor Collector Current IC=1.5A MARKING Y1 SOT-23 Absolute maximum ratings (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj

 9.133. Size:1171K  cn mot
 s8050.pdf

 9.134. Size:1745K  cn mot
 ss8050.pdf

SS8050 MOT NPN TRANSISTOR NPN NPN High Voltage Transistor SMD SS8050 NPN, BEC Transistor Polarity NPN General Purpose Transistors Transistor pinout BEC SOT-23 Package Marking Code Y1 hFE 100 200, 200 300 Ldeal for Medium Power Amplification and Switching Inner circuit

 9.135. Size:1830K  cn shunye
 mmbtss8050l mmbtss8050h mmbtss8050j.pdf

MMBTSS8050 NPN Silicon General Purpose Transistors Features SOT23 High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is available Mechanical data Epoxy UL94-V0 rated flame retardant (B) (C) Case Molded plastic, SOT-23 (A) Terminals Solder plated, solderable per MIL-STD-750, Method 2026 0.063 (1.60) 0.027 (0.67)

 9.136. Size:1221K  cn xch
 s8050l s8050h s8050j.pdf

S8050 Features Complimentary to S8550 Collector Current IC=0.5A SOT-23 Marking Code J3Y A Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 J MAXIMUM RATINGS (Ta=25 unless otherwise noted) 0.013 0.10 K K 0.903 1.10 Symbol Parameter

 9.137. Size:1184K  cn xch
 ss8050l ss8050h ss8050j.pdf

SS8050 Features Complimentary to SS8550 Collector Current IC=1.5A SOT-23 A Marking Code Y 1 Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 J 0.013 0.10 K MAXIMUM RATINGS (Ta=25 unless otherwise noted) K 0.903 1.10 J L 0.45 0.61

 9.138. Size:396K  cn weida
 s8050b s8050c s8050d.pdf

Jiangsu Weida Semiconductor Co., Ltd. S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit VCEO Collector-Emitter Voltage 25 Vdc VCBO Collector-Base Voltage 40 Vdc VEBO Emitter-Base VOltage 5.0 Vdc Collector Current IC 500 mAdc PD Total Device Dissipation T =25 C 0.625 W A Junction Te

 9.139. Size:220K  cn weida
 ss8050b ss8050c ss8050d ss8050e.pdf

Jiangsu Weida Semiconductor Co., Ltd. SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation