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ST2SA1663U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST2SA1663U
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT89
 

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ST2SA1663U Datasheet (PDF)

 ..1. Size:564K  semtech
 st2sa1663u.pdf pdf_icon

ST2SA1663U

ST 2SA1663U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 30 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1.5 ABase Current -IB 0.3 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

 6.1. Size:625K  semtech
 st2sa1661u.pdf pdf_icon

ST2SA1663U

ST 2SA1661U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 120 VCollector Emitter Voltage -VCEO 120 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 800 mABase Current -IB 160 mA0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

 6.2. Size:618K  semtech
 st2sa1666u.pdf pdf_icon

ST2SA1663U

ST 2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 2 ABase Current -IB 0.4 A0.5 Total Power Dissipation Ptot W 1 1) Junction Temperature Tj 150 Stora

 8.1. Size:688K  semtech
 st2sa1213u.pdf pdf_icon

ST2SA1663U

ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector C

MOSTRAR MÁS

Otros transistores... BCX56U , ST13002T , ST13003 , ST13003H , ST13003T , ST2SA1012 , ST2SA1213U , ST2SA1661U , BC546 , ST2SA1666U , ST2SA1900U , ST2SA2060U , ST2SA2071U , ST2SA683 , ST2SA684 , ST2SB1124U , ST2SB1132U .

History: 2SB1078 | HA44 | RN4903 | 2N1841 | ECG385 | 2SD1214 | PBSS302NX

 

 
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