ST2SB1151T Todos los transistores

 

ST2SB1151T Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST2SB1151T
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO126
 

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ST2SB1151T datasheet

 ..1. Size:349K  semtech
 st2sb1151t.pdf pdf_icon

ST2SB1151T

ST 2SB1151T PNP Epitaxial Silicon Power Transistor E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 7 V Collector Current (DC) -IC 5 A Collector Current (PW = 10 ms) -ICP 8 A Base Current -IB 1 A O Collector Power Dissipation (a

 7.1. Size:558K  semtech
 st2sb1188u.pdf pdf_icon

ST2SB1151T

ST 2SB1188U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 3 1) A 0.5 PC W Collector Power Dissipation 2 2) Junction Temper

 7.2. Size:539K  semtech
 st2sb1132u.pdf pdf_icon

ST2SB1151T

ST 2SB1132U PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current - DC -IC 1 A Collector Current - Pulse 1) -ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Stora

 7.3. Size:862K  semtech
 st2sb1124u.pdf pdf_icon

ST2SB1151T

ST 2SB1124U PNP Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Collector Current (Pulse) -ICP 6 A 0.5 PC W Collector Power Dissipation 1 1) Junction Temperature Tj 150 Storage Temperatu

MOSTRAR MÁS

Otros transistores... ST2SA1666U , ST2SA1900U , ST2SA2060U , ST2SA2071U , ST2SA683 , ST2SA684 , ST2SB1124U , ST2SB1132U , 2SD2499 , ST2SB1188U , ST2SB1386U , ST2SB1561U , ST2SB596 , ST2SB772R , ST2SB772T , ST2SB772U , ST2SB9435U .

 

 

 


 
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