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ST2SC1383 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST2SC1383
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 85
   Paquete / Cubierta: TO92
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ST2SC1383 Datasheet (PDF)

 ..1. Size:514K  semtech
st2sc1383 st2sc1384.pdf pdf_icon

ST2SC1383

ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCo

 0.1. Size:371K  globaltech semi
gst2sc1383.pdf pdf_icon

ST2SC1383

GST2SC1383 Series NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V (2SC1383) amplifier and switch. 50V (2SC1384) Collector Current : 1.0A Lead(Pb)-FreePackages & Pin Assignments TO-92MOD Pin Description1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Ma

 9.1. Size:647K  semtech
st2sc4073u.pdf pdf_icon

ST2SC1383

ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W T

 9.2. Size:671K  semtech
st2sc4379u.pdf pdf_icon

ST2SC1383

ST 2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 VCollector Current IC 2 ABase Current IB 0.4 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SD1879 | MD6003F

 

 
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