ST2SC4378U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST2SC4378U
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar ST2SC4378U
ST2SC4378U Datasheet (PDF)
st2sc4378u.pdf
ST 2SC4378U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 80 VCollector Emitter Voltage VCEO 60 VEmitter Base Voltage VEBO 5 VCollector Current IC 1 APeak Collector Current ICP 2 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150 Storage Temperature Range Tstg
st2sc4379u.pdf
ST 2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 VCollector Current IC 2 ABase Current IB 0.4 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150
st2sc4375u.pdf
ST 2SC4375U NPN Silicon Epitaxial Planar Transistor High current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 30 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 1.5 A0.5 Ptot W Total Power Dissipation11) Junction Temperature TJ 150 Storage Temperature Range TStg -
st2sc4073u.pdf
ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W T
st2sc4672u.pdf
ST 2SC4672U NPN Silicon Epitaxial Planar Transistor Low Frequency Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 6 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 6 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ
st2sc4541u.pdf
ST 2SC4541U NPN Silicon Epitaxial Planar Transistor for power switching and power amplifier applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 3 A Current IB 0.6 ABase0.5 Ptot W Total Power Dissipation1 1) Junction Te
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N1046A | 2SC1951
Liste
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