ST2SC4379U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST2SC4379U
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar ST2SC4379U
ST2SC4379U Datasheet (PDF)
st2sc4379u.pdf
ST 2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 VCollector Current IC 2 ABase Current IB 0.4 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150
st2sc4378u.pdf
ST 2SC4378U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 80 VCollector Emitter Voltage VCEO 60 VEmitter Base Voltage VEBO 5 VCollector Current IC 1 APeak Collector Current ICP 2 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150 Storage Temperature Range Tstg
st2sc4375u.pdf
ST 2SC4375U NPN Silicon Epitaxial Planar Transistor High current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 30 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 1.5 A0.5 Ptot W Total Power Dissipation11) Junction Temperature TJ 150 Storage Temperature Range TStg -
st2sc4073u.pdf
ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W T
st2sc4672u.pdf
ST 2SC4672U NPN Silicon Epitaxial Planar Transistor Low Frequency Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 6 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 6 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ
st2sc4541u.pdf
ST 2SC4541U NPN Silicon Epitaxial Planar Transistor for power switching and power amplifier applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 3 A Current IB 0.6 ABase0.5 Ptot W Total Power Dissipation1 1) Junction Te
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BFN23R | MQ2907AR | 2SC4159E
History: BFN23R | MQ2907AR | 2SC4159E
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050