ST2SD1691T Todos los transistores

 ..1. Size:350K  semtech
 st2sd1691t.pdf

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter VCBO 60 V Collector to Base Voltage VCEO 60 V Collector to Emitter

 7.1. Size:560K  semtech
 st2sd1664u.pdf

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Storage Te

 7.2. Size:391K  semtech
 st2sd1664u-p st2sd1664u-q st2sd1664u-r.pdf

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Storage Te

 8.1. Size:551K  semtech
 st2sd1760u.pdf

ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 W Collector Power Dissipation Junction Temperature TJ 150 Stor

 8.2. Size:531K  semtech
 st2sd1766u.pdf

ST 2SD1766U NPN Silicon Epitaxial Planar Transistor Medium power amplifier Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Peak Collector Current (Single pulse, Pw = 20 ms) ICP 2.5 A 0.5 Collector Power Dissipation PC W 2 1) Junction T

 8.3. Size:476K  semtech
 st2sd1163a.pdf

ST 2SD1163A NPN Silicon Epitaxial Planar Transistor for TV horizontal deflection output applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 150 V Collector Emitter Voltage VCEO 6 V Emitter Base Voltage VEBO 7 A Collector Current IC 10 A Collector Peak Current ICP 20 A Collector Surge