ST2SD874U Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ST2SD874U

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 85

Encapsulados: SOT89

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ST2SD874U datasheet

 ..1. Size:539K  semtech
 st2sd874u.pdf pdf_icon

ST2SD874U

ST 2SD874U NPN Silicon Epitaxial Planar Transistor for low frequency power amplification applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICP 1.5 A Collector Power Dissipation PC 1 W Junction Temperature T

 8.1. Size:535K  semtech
 st2sd882u.pdf pdf_icon

ST2SD874U

ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 350 s) ICP 7 A T

 8.2. Size:297K  semtech
 st2sd882u-p.pdf pdf_icon

ST2SD874U

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 120 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 V Collector

 8.3. Size:439K  semtech
 st2sd882ht.pdf pdf_icon

ST2SD874U

ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector C

MOSTRAR MÁS

Otros transistores... ST2SD1163A, ST2SD1664U, ST2SD1691T, ST2SD1760U, ST2SD1766U, ST2SD2150U, ST2SD2391U, ST2SD526, BC639, ST2SD882HT, ST2SD882T, ST2SD882U, ST2SD882U-P, ST8050, STBD135T, STBD136T, STBD137T