2SC5657 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5657 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 1500 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 5
Encapsulados: TOP3E
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2SC5657 datasheet
..1. Size:70K panasonic
2sc5657.pdf 
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8.1. Size:93K nec
2sc5655.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5655 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES 1006 package employed (1.0 0.6 0.5 mm) NF = 1.5 dB TYP., S21e 2 = 4.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5655 50 pcs (Non reel) 8 mm wide paper carrier taping 2SC
8.2. Size:18K nec
2sc5653 ne687m23.pdf
PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 HIGH GAIN BANDWIDTH PRODUCT fT =
8.3. Size:18K nec
2sc5652 ne685m23.pdf
PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 HIGH GAIN BANDWIDTH PRODUCT fT =
8.4. Size:18K nec
2sc5650 ne681m23.pdf
PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 HIGH GAIN BANDWIDTH PRODUCT 1 fT =
8.5. Size:94K nec
2sc5656.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5656 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES 1006 package employed (1.0 0.6 0.5 mm) NF = 1.3 dB TYP., S21e 2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5656 50 pcs (Non reel) 8 mm wide paper carrier taping 2S
8.6. Size:19K nec
2sc5651 ne688m23.pdf
PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT 0.25 1 fT =
8.7. Size:978K rohm
2sc5659fha.pdf
AEC-Q101 Qualified High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659FHA 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max.
8.8. Size:140K rohm
2sc5659 2sc5659 2sc4618 2sc4098 2sc2413k.pdf
High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM VMT3 (2) Emitter Absolute maximum ratings (Ta=25 C) (3) Collector
8.9. Size:171K rohm
2sc2412k 2sc4081 2sc4617 2sc5658 2sc1740s.pdf
General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN
8.10. Size:1053K rohm
2sc5658fha.pdf
AEC-Q101 Qualified General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHA Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC2412KFRA 2SC4081FRA 2. Complements the 2SA1037AK / 2SA1576A / 2SA1037AKFRA / 2SA1576AFRA 2SA1774FRA / 2SA2029FHA 2SA1774H / 2SA2029
8.11. Size:77K rohm
2sc5658.pdf
2SC2412K / 2SC4081 / 2SC4617 / Transistors 2SC5658 / 2SC1740S General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S External dimensions (Units mm) Features 1) Low Cob. 2SC2412K 2SC4081 2SC4617 Cob=2.0pF (Typ.) (1) 2) Complements the 2SA1037AK / (2) (3) 1.25 2SA1576A / 2SA1774H / 1.6 0.8 2.1 2.8 2SA2029 / 2SA933AS. 1.6 0.1Min. 0.1Min.
8.12. Size:2718K rohm
2sc5658 2sc4617eb 2sc4617 2sc4081ub 2sc4081u3 2sc2412k.pdf
2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081U3 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA
8.13. Size:2688K rohm
2sc5658 2sc4617eb 2sc4617 2sc4081ub 2sc4081 2sc2412k.pdf
2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA17
8.14. Size:98K onsemi
2sc5658rm3.pdf
2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board Space TRANSISTOR
8.15. Size:98K onsemi
2sc5658m3.pdf
2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board Space TRANSISTOR
8.16. Size:157K onsemi
2sc5658m3t5g 2sc5658rm3t5g.pdf
2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board Space TRANSISTOR
8.17. Size:98K onsemi
nsv2sc5658m3t5g.pdf
2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board Space TRANSISTOR
8.18. Size:36K panasonic
2sc5654.pdf
Transistors 2SC5654 Silicon NPN epitaxial planer type Unit mm For DC-DC converter 0.15+0.10 0.3+0.1 0.05 0.0 Complementary to 2SA2028 3 Features Low collector to emitter saturation voltage VCE(sat) 1 2 S-mini type package, allowing downsizing and thinning of the (0.65) (0.65) equipment and automatic insertion through the tape packing 1.3 0.1 2.0 0.2 Absolut
8.19. Size:455K secos
2sc5658.pdf
2SC5658 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-723 FEATURE Low current (max. 150 mA) Low voltage (max. 50 V). CLASSIFICATION OF hFE (1) Product-Rank 2SC2658-Q 2SC2658-R 2SC2658-S Range 120 270 180 390 270 560 Marking BQ BR BS Collector 3 Millimeter M
8.20. Size:607K jiangsu
2sc5658.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors 2SC5658 General purpose transistors (NPN) SOT-723 FEATURES Low Cob Complements the 2SA2029 1. BASE 2. EMITTER 3. COLLECTOR Marking BQ,BR,BS Absolute maximum ratings (Ta=25 unless otherwise noted) Symbol Parameter Limit Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emit
8.21. Size:330K lrc
l2sc5658qm3t5g.pdf
LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h
8.22. Size:158K lrc
l2sc5658rm3t5g.pdf
LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h
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