2SC5657 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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DATA SHEETNPN SILICON RF TRANSISTOR2SC5655NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN NON-LEAD MINIMOLDFEATURES 1006 package employed (1.0 0.6 0.5 mm) NF = 1.5 dB TYP., S21e2 = 4.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHzORDERING INFORMATIONPart Number Quantity Supplying Form2SC5655 50 pcs (Non reel) 8 mm wide paper carrier taping2SC

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE687M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 HIGH GAIN BANDWIDTH PRODUCT:fT =

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE685M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 HIGH GAIN BANDWIDTH PRODUCT:fT =

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE681M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.25 HIGH GAIN BANDWIDTH PRODUCT: 1fT =

DATA SHEETNPN SILICON RF TRANSISTOR2SC5656NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN NON-LEAD MINIMOLDFEATURES 1006 package employed (1.0 0.6 0.5 mm) NF = 1.3 dB TYP., S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHzORDERING INFORMATIONPart Number Quantity Supplying Form2SC5656 50 pcs (Non reel) 8 mm wide paper carrier taping2S

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE688M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT:0.251fT =

AEC-Q101 QualifiedHigh-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413KFeatures Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC5659FHA2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.ROHM : VMT3(2) EmitterAbsolute maximum ratings (Ta=25C) (3) Collector

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC46172. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1)(2)(3)1.251.6 0.82.12.81.6Structure Epitaxial planar type 0.1Min. 0.1Min.0.3Min.NPN

AEC-Q101 QualifiedGeneral purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHAFeatures Dimensions (Unit : mm)1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)2SC2412K 2SC40812SC2412KFRA 2SC4081FRA2. Complements the 2SA1037AK / 2SA1576A /2SA1037AKFRA / 2SA1576AFRA2SA1774FRA / 2SA2029FHA 2SA1774H / 2SA2029

2SC2412K / 2SC4081 / 2SC4617 /Transistors 2SC5658 / 2SC1740SGeneral purpose transistor (50V, 0.15A)2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /2SC1740S External dimensions (Units : mm) Features1) Low Cob.2SC2412K 2SC4081 2SC4617Cob=2.0pF (Typ.)(1)2) Complements the 2SA1037AK /(2)(3)1.252SA1576A / 2SA1774H /1.6 0.82.12.82SA2029 / 2SA933AS.1.60.1Min. 0.1Min.

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081U3 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA17

2SC5658M3T5G,2SC5658RM3T5GNPN Silicon GeneralPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board SpaceTRANSISTOR

2SC5658M3T5G,2SC5658RM3T5GNPN Silicon GeneralPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board SpaceTRANSISTOR

2SC5658M3T5G,2SC5658RM3T5GNPN Silicon GeneralPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board SpaceTRANSISTOR

2SC5658M3T5G,2SC5658RM3T5GNPN Silicon GeneralPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board SpaceTRANSISTOR

Transistors2SC5654Silicon NPN epitaxial planer typeUnit: mmFor DC-DC converter0.15+0.100.3+0.10.050.0Complementary to 2SA20283 Features Low collector to emitter saturation voltage VCE(sat)1 2 S-mini type package, allowing downsizing and thinning of the(0.65) (0.65)equipment and automatic insertion through the tape packing1.30.12.00.2 Absolut

2SC5658 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-723 FEATURE Low current (max. 150 mA) Low voltage (max. 50 V). CLASSIFICATION OF hFE (1) Product-Rank 2SC2658-Q 2SC2658-R 2SC2658-S Range 120~270 180~390 270~560 Marking BQ BR BS Collector 3 Millimeter M

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors2SC5658 General purpose transistors (NPN)SOT-723 FEATURES Low Cob Complements the 2SA20291. BASE 2. EMITTER3. COLLECTOR Marking: BQ,BR,BS Absolute maximum ratings (Ta=25 unless otherwise noted) Symbol Parameter Limit UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emit

LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h

LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h