L2SA2029RM3T5G Todos los transistores

 

L2SA2029RM3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L2SA2029RM3T5G
   Código: FR
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.265 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 3.5 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: SOT723

 Búsqueda de reemplazo de transistor bipolar L2SA2029RM3T5G

 

L2SA2029RM3T5G Datasheet (PDF)

 ..1. Size:157K  lrc
l2sa2029rm3t5g.pdf

L2SA2029RM3T5G
L2SA2029RM3T5G

LESHAN RADIO COMPANY, LTD.PNP Silicon GeneralL2SA2029QM3T5GPurpose Amplifier TransistorL2SA2029RM3T5GThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where board3space is at a premium. Reduces Board Space High hFE, 210-460 (Typical)2

 6.1. Size:290K  lrc
l2sa2029qm3t5g.pdf

L2SA2029RM3T5G
L2SA2029RM3T5G

LESHAN RADIO COMPANY, LTD.PNP Silicon GeneralL2SA2029QM3T5GPurpose Amplifier TransistorL2SA2029RM3T5GThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where board3space is at a premium. Reduces Board Space High hFE, 210-460 (Typical)2

 8.1. Size:125K  lrc
s-l2sa2030m3t5g.pdf

L2SA2029RM3T5G
L2SA2029RM3T5G

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5GVCE (sat) 250mA At IC = -200mA / IB = -10mA

 8.2. Size:125K  lrc
l2sa2030m3t5g.pdf

L2SA2029RM3T5G
L2SA2029RM3T5G

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5GVCE (sat) 250mA At IC = -200mA / IB = -10mA

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
Back to Top

 


L2SA2029RM3T5G
  L2SA2029RM3T5G
  L2SA2029RM3T5G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
Back to Top