L2SC4617QT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L2SC4617QT1G
Código: BQ
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 180 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: SC89
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L2SC4617QT1G datasheet
..1. Size:1098K lrc
l2sc4617qt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site L2SC4617QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering information S-L2SC4617QT1G Series Device Marking Shipping L2SC4617QT1G BQ
..2. Size:1098K lrc
l2sc4617qt1g l2sc4617qt3g l2sc4617rt1g l2sc4617rt3g l2sc4617st1g l2sc4617st3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site L2SC4617QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering information S-L2SC4617QT1G Series Device Marking Shipping L2SC4617QT1G BQ
..3. Size:1098K lrc
l2sc4617qt1g l2sc4617rt1g l2sc4617st1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site L2SC4617QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering information S-L2SC4617QT1G Series Device Marking Shipping L2SC4617QT1G BQ
6.1. Size:157K lrc
l2sc4617rt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. L2SC4617QT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC4617QT1G ORDERING INFORMATION Series Device Marking Shipping L2SC4617QT1G
6.2. Size:157K lrc
l2sc4617st1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4617QT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC4617QT1G ORDERING INFORMATION Series Device Marking Shipping L2SC4617QT1G B
9.1. Size:185K lrc
l2sc4081qt1g l2sc4081rt1g l2sc4081st1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
9.2. Size:513K lrc
l2sc4083pt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier L2SC4083NT1G Transistor Series We declare that the material of product compliance with RoHS requirements. S-L2SC4083NT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering Information Device Marking Shipping L2SC4083NT1G 3000
9.3. Size:174K lrc
l2sc4083nwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083NWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083NWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083NWT1G
9.4. Size:188K lrc
l2sc4081qt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
9.5. Size:185K lrc
l2sc4081qt1g l2sc4081qt3g l2sc4081rt1g l2sc4081rt3g l2sc4081st1g l2sc4081st3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
9.6. Size:170K lrc
l2sc4083pwt1g l2sc4083pwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G
9.7. Size:185K lrc
l2sc4081st1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
9.8. Size:180K lrc
l2sc4083qwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083QWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083QWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083QWT1G
9.9. Size:191K lrc
l2sc4226t1g.pdf
LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirements. S- Prefix
9.10. Size:185K lrc
l2sc4081rt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
9.11. Size:170K lrc
l2sc4083pwt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G
Otros transistores... L2SC3838NLT1G, L2SC4081QT1G, L2SC4081RT1G, L2SC4081ST1G, L2SC4083NWT1G, L2SC4083PT1G, L2SC4083PWT1G, L2SC4083QWT1G, 2222A, L2SC4617RT1G, L2SC4617ST1G, L2SC5635WT1G, L2SC5658QM3T5G, L2SC5658RM3T5G, L2SD1781KRLT1G, L2SD2114KVLT1G, L2SD2114KWLT1G
