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L2SC5635WT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L2SC5635WT1G
   Código: HF1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 15 V
   Tensión colector-emisor (Vce): 6 V
   Tensión emisor-base (Veb): 1.5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 8000 MHz
   Capacitancia de salida (Cc): 1 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SC70
 

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L2SC5635WT1G Datasheet (PDF)

 ..1. Size:2204K  lrc
 l2sc5635wt1g.pdf pdf_icon

L2SC5635WT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635WT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)2.High gain,low noise S-L2SC5635WT1G3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC

 6.1. Size:44K  lrc
 l2sc5635lt1g.pdf pdf_icon

L2SC5635WT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635LT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)S-L2SC5635LT1G2.High gain,low noise3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.4.S- Prefix for Automotive and Other Applications Requiring Unique Site3and Control Change Requirements;

 8.1. Size:330K  lrc
 l2sc5658qm3t5g.pdf pdf_icon

L2SC5635WT1G

LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h

 8.2. Size:158K  lrc
 l2sc5658rm3t5g.pdf pdf_icon

L2SC5635WT1G

LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h

MOSTRAR MÁS

Otros transistores... L2SC4081ST1G , L2SC4083NWT1G , L2SC4083PT1G , L2SC4083PWT1G , L2SC4083QWT1G , L2SC4617QT1G , L2SC4617RT1G , L2SC4617ST1G , NJW0281G , L2SC5658QM3T5G , L2SC5658RM3T5G , L2SD1781KRLT1G , L2SD2114KVLT1G , L2SD2114KWLT1G , L2SD882P , L2SD882Q , L8050HPLT1G .

History: MJE32B | 2SC2952 | 92GU05

 

 
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