L2SC5658QM3T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L2SC5658QM3T5G
Código: QM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.26 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 180 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: SOT723
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L2SC5658QM3T5G datasheet
l2sc5658qm3t5g.pdf
LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h
l2sc5658rm3t5g.pdf
LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h
l2sc5635lt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635LT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) S-L2SC5635LT1G 2.High gain,low noise 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 4.S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control Change Requirements;
l2sc5635wt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635WT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) 2.High gain,low noise S-L2SC5635WT1G 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
Otros transistores... L2SC4083NWT1G , L2SC4083PT1G , L2SC4083PWT1G , L2SC4083QWT1G , L2SC4617QT1G , L2SC4617RT1G , L2SC4617ST1G , L2SC5635WT1G , 2SD669A , L2SC5658RM3T5G , L2SD1781KRLT1G , L2SD2114KVLT1G , L2SD2114KWLT1G , L2SD882P , L2SD882Q , L8050HPLT1G , L8050HQLT1G .
History: 2N1890 | ECG159P | 2SC5025R
History: 2N1890 | ECG159P | 2SC5025R
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