2N6479
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6479
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 87
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 400
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: X21
Búsqueda de reemplazo de transistor bipolar 2N6479
2N6479
Datasheet (PDF)
9.5. Size:154K jmnic
2n6477 2n6478.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collector;connected to
9.6. Size:130K inchange semiconductor
2n6470 2n6471 2n6472.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
9.7. Size:59K inchange semiconductor
2n6475 2n6476.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6475 2N6476 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified out
9.8. Size:51K inchange semiconductor
2n6470.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6470 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- : hFE= 20-150(Min)@IC = 5A Low Saturation Voltage- : VCE(sat)= 1.3V(Max)@ IC = 5A APPLICATIONS Designed for general-purpose switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL
9.9. Size:120K inchange semiconductor
2n6477 2n6478.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collecto
9.10. Size:60K inchange semiconductor
2n6473 2n6474.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ma
Otros transistores... 2N3200
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