L8050QLT1G Todos los transistores

 

L8050QLT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L8050QLT1G
   Código: 1YC
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SOT23

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L8050QLT1G Datasheet (PDF)

 ..1. Size:70K  lrc
l8050plt1g l8050qlt1g l8050rlt1g l8050slt1g.pdf

L8050QLT1G L8050QLT1G

LESHAN RADIO COMPANY, LTD.L8050PLT1GGeneral Purpose TransistorsSeriesNPN SiliconS-L8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site2and Control Change Requirements; AEC-Q101 Qualified and PPA

 ..2. Size:70K  lrc
l8050qlt1g.pdf

L8050QLT1G L8050QLT1G

LESHAN RADIO COMPANY, LTD.L8050PLT1GGeneral Purpose TransistorsSeriesNPN SiliconS-L8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site2and Control Change Requirements; AEC-Q101 Qualified and PPA

 ..3. Size:70K  lrc
l8050plt1g l8050plt3g l8050qlt1g l8050qlt3g l8050rlt1g l8050rlt3g l8050slt1g l8050slt3g.pdf

L8050QLT1G L8050QLT1G

LESHAN RADIO COMPANY, LTD.L8050PLT1GGeneral Purpose TransistorsSeriesNPN SiliconS-L8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site2and Control Change Requirements; AEC-Q101 Qualified and PPA

 9.1. Size:597K  blue-rocket-elect
l8050.pdf

L8050QLT1G L8050QLT1G

L8050(BR3DA8050K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features PC, IC , L8550(BR3CA8550K) High PC and IC, complementary pair with L8550(BR3CA8550K). / Applications 2W 2W output amplifier of portable radios in cl

 9.2. Size:407K  blue-rocket-elect
l8050m.pdf

L8050QLT1G L8050QLT1G

L8050M Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features L8550M Complementary pair with L8550M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 3 2

 9.3. Size:88K  lrc
l8050hqlt1g.pdf

L8050QLT1G L8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050HPb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

 9.4. Size:88K  lrc
l8050hplt1g l8050hplt3g l8050hqlt1g l8050hqlt3g l8050hrlt1g l8050hrlt3g l8050hslt1g l8050hslt3g.pdf

L8050QLT1G L8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050HPb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

 9.5. Size:101K  lrc
l8050hplt1g.pdf

L8050QLT1G L8050QLT1G

LESHAN RADIO COMPANY, LTD.L8050HQLTIGGeneral Purpose TransistorsSeriesNPN Silicon S-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050H Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2and Control Change Requirements; AEC-Q101 Qualified and

 9.6. Size:83K  lrc
l8050hslt1g.pdf

L8050QLT1G L8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGNPN SiliconSeriesS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P

 9.7. Size:84K  lrc
l8050hrlt1g.pdf

L8050QLT1G L8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P

 9.8. Size:84K  lrc
l8050hplt1g l8050hqlt1g l8050hrlt1g l8050hslt1g.pdf

L8050QLT1G L8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P

 9.9. Size:77K  lrc
l8050plt1g.pdf

L8050QLT1G L8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050PLT1GSeriesNPN SiliconS-L8050PLT1GFEATURE Series High current capacity in compact package.IC = 0.8A.3 Epitaxial planar type. NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2and Control Change Requirements; AEC-Q101 Qualified and PP

 9.10. Size:464K  cn fh
fhtl8050-me.pdf

L8050QLT1G L8050QLT1G

FHTL8050-MENPN Transistor DESCRIPTIONSSOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONSGeneral purpose application,switching. PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Addition

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