L8050QLT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L8050QLT1G
Código: 1YC
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar L8050QLT1G
L8050QLT1G Datasheet (PDF)
l8050plt1g l8050qlt1g l8050rlt1g l8050slt1g.pdf
LESHAN RADIO COMPANY, LTD.L8050PLT1GGeneral Purpose TransistorsSeriesNPN SiliconS-L8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site2and Control Change Requirements; AEC-Q101 Qualified and PPA
l8050qlt1g.pdf
LESHAN RADIO COMPANY, LTD.L8050PLT1GGeneral Purpose TransistorsSeriesNPN SiliconS-L8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site2and Control Change Requirements; AEC-Q101 Qualified and PPA
l8050plt1g l8050plt3g l8050qlt1g l8050qlt3g l8050rlt1g l8050rlt3g l8050slt1g l8050slt3g.pdf
LESHAN RADIO COMPANY, LTD.L8050PLT1GGeneral Purpose TransistorsSeriesNPN SiliconS-L8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site2and Control Change Requirements; AEC-Q101 Qualified and PPA
l8050.pdf
L8050(BR3DA8050K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features PC, IC , L8550(BR3CA8550K) High PC and IC, complementary pair with L8550(BR3CA8550K). / Applications 2W 2W output amplifier of portable radios in cl
l8050m.pdf
L8050M Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features L8550M Complementary pair with L8550M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 3 2
l8050hqlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050HPb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
l8050hplt1g l8050hplt3g l8050hqlt1g l8050hqlt3g l8050hrlt1g l8050hrlt3g l8050hslt1g l8050hslt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050HPb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
l8050hplt1g.pdf
LESHAN RADIO COMPANY, LTD.L8050HQLTIGGeneral Purpose TransistorsSeriesNPN Silicon S-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050H Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2and Control Change Requirements; AEC-Q101 Qualified and
l8050hslt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGNPN SiliconSeriesS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P
l8050hrlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P
l8050hplt1g l8050hqlt1g l8050hrlt1g l8050hslt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P
l8050plt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050PLT1GSeriesNPN SiliconS-L8050PLT1GFEATURE Series High current capacity in compact package.IC = 0.8A.3 Epitaxial planar type. NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2and Control Change Requirements; AEC-Q101 Qualified and PP
fhtl8050-me.pdf
FHTL8050-MENPN Transistor DESCRIPTIONSSOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONSGeneral purpose application,switching. PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Addition
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SD2460 | HF200 | 2SC1842 | BC235 | KRA772E | BC231GN | MM488
History: 2SD2460 | HF200 | 2SC1842 | BC235 | KRA772E | BC231GN | MM488
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050