LBC807-40LT1G Todos los transistores

 

LBC807-40LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC807-40LT1G

Código: 5C1

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hFE): 250

Encapsulados: SOT23

 Búsqueda de reemplazo de LBC807-40LT1G

- Selecciónⓘ de transistores por parámetros

 

LBC807-40LT1G datasheet

 ..1. Size:138K  lrc
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf pdf_icon

LBC807-40LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G FEATURE LBC807-25LT1G LBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. 3 PNP complement LBC807 Series. We declare that the material of product compliance with RoHS requirements. 1 2 DEVICE MARKIN

 ..2. Size:184K  lrc
lbc807-40lt1g.pdf pdf_icon

LBC807-40LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G FEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. LBC807-40LT1G General purpose switching and amplification. S-LBC807-16LT1G PNP complement LBC807 Series. We declare that the material of product compliance with RoHS requirements. S-LBC8

 ..3. Size:184K  lrc
lbc807-16lt1g lbc807-16lt3g lbc807-25lt1g lbc807-25lt3g lbc807-40lt1g lbc807-40lt3g.pdf pdf_icon

LBC807-40LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G FEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. LBC807-40LT1G General purpose switching and amplification. S-LBC807-16LT1G PNP complement LBC807 Series. We declare that the material of product compliance with RoHS requirements. S-LBC8

 5.1. Size:107K  lrc
lbc807-40wt1g.pdf pdf_icon

LBC807-40LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-40WT1G DEVICE MARKING AND ORDERING INFORMATION S-LBC807-40WT1G Device Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel S-

Otros transistores... L9014TLT1G , L9015QLT1G , L9015RLT1G , L9015SLT1G , LBC807-16LT1G , LBC807-16WT1G , LBC807-25LT1G , LBC807-25WT1G , 2N5401 , LBC807-40WT1G , LBC817-16LT1G , LBC817-16WT1G , LBC817-25DPMT1G , LBC817-25LT1G , LBC817-25WT1G , LBC817-40LT1G , LBC817-40WT1G .

History: KTC3227

 

 

 


History: KTC3227

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

c3205 transistor | tip35c datasheet | 2n5401 datasheet | mj21194g | irfz34n | mn2488 | irfb438 | mj21193g

 

 

↑ Back to Top
.