LBC846BPDW1T1G Todos los transistores

 

LBC846BPDW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC846BPDW1T1G

Código: BB

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 65 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SC88

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LBC846BPDW1T1G datasheet

 ..1. Size:172K  lrc
lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdf pdf_icon

LBC846BPDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

 ..2. Size:188K  lrc
lbc846bpdw1t1g.pdf pdf_icon

LBC846BPDW1T1G

LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G Dual General Purpose Transistors LBC847BPDW1T1G LBC847CPDW1T1G NPN/PNP Duals (Complimentary) LBC848BPDW1T1G These transistors are designed for general purpose amplifier LBC848CPDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

 ..3. Size:172K  lrc
lbc846bpdw1t1g lbc847bpdw1t1g lbc847cpdw1t1g lbc848bpdw1t1g lbc848cpdw1t1g.pdf pdf_icon

LBC846BPDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

 7.1. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf pdf_icon

LBC846BPDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848

Otros transistores... LBC817-25LT1G , LBC817-25WT1G , LBC817-40LT1G , LBC817-40WT1G , LBC846ALT1G , LBC846AWT1G , LBC846BDW1T1G , LBC846BLT1G , D882 , LBC846BWT1G , LBC847ALT1G , LBC847AWT1G , LBC847BDW1T1G , LBC847BLT1G , LBC847BPDW1T1G , LBC847BTT1G , LBC847BWT1G .

 

 

 


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