LBC847BTT1G Todos los transistores

 

LBC847BTT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC847BTT1G

Código: 1F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SC89

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LBC847BTT1G datasheet

 ..1. Size:138K  lrc
lbc847btt1g.pdf pdf_icon

LBC847BTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC847ATT1G These transistors are designed for general purpose amplifier S-LBC847ATT1G applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Series Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 ..2. Size:139K  lrc
lbc847att1g lbc847btt1g lbc847ctt1g.pdf pdf_icon

LBC847BTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC847ATT1G These transistors are designed for general purpose amplifier S-LBC847ATT1G applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Series Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 7.1. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf pdf_icon

LBC847BTT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848

 7.2. Size:391K  lrc
lbc847bwt1g.pdf pdf_icon

LBC847BTT1G

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G CWT1G ( ) ORDERING INFORMATION Pb Free S-LBC846AWT1G,BWT1G Device Package Shipping S-LBC847AWT1G,BWT1G LBC846AWT1G SC-70 3000/Tape&Reel S-LBC846AWT1G CWT1G LBC846AWT3G SC-70

Otros transistores... LBC846BLT1G , LBC846BPDW1T1G , LBC846BWT1G , LBC847ALT1G , LBC847AWT1G , LBC847BDW1T1G , LBC847BLT1G , LBC847BPDW1T1G , 2N2222A , LBC847BWT1G , LBC847CDW1T1G , LBC847CLT1G , LBC847CWT1G , LBC848ALT1G , LBC848BDW1T1G , LBC848BLT1G , LBC848BPDW1T1G .

History: 2SB1256 | LBC848BLT1G | 3TE440 | 2SB1103 | 2SB1102 | 2SB1022 | LBC848BDW1T1G

 

 

 

 

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