LBC847CWT1G Todos los transistores

 

LBC847CWT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC847CWT1G

Código: 1G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 420

Encapsulados: SC70

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LBC847CWT1G datasheet

 ..1. Size:401K  lrc
lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdf pdf_icon

LBC847CWT1G

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATIO

 ..2. Size:402K  lrc
lbc847cwt1g.pdf pdf_icon

LBC847CWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G NPN Silicon We declare that the material of product compliance with RoHS requirements. CWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free

 7.1. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf pdf_icon

LBC847CWT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848

 7.2. Size:193K  lrc
lbc847cpdw1t1g.pdf pdf_icon

LBC847CWT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) LBC846BPDW1T1G These transistors are designed for general purpose amplifier LBC847BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC847CPDW1T1G designed for low power surface mount applications. LBC848BPDW1T1G LBC848CPDW1T1G We declare that the material of product comp

Otros transistores... LBC847AWT1G , LBC847BDW1T1G , LBC847BLT1G , LBC847BPDW1T1G , LBC847BTT1G , LBC847BWT1G , LBC847CDW1T1G , LBC847CLT1G , 2SC2073 , LBC848ALT1G , LBC848BDW1T1G , LBC848BLT1G , LBC848BPDW1T1G , LBC848BWT1G , LBC848CDW1T1G , LBC848CLT1G , LBC848CPDW1T1G .

History: 2SB1103 | 2SB986U | DTA210 | LBC848BDW1T1G | LBC848BLT1G | 3TE440 | 2SB1022

 

 

 

 

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