LBC858CDW1T1G Todos los transistores

 

LBC858CDW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC858CDW1T1G

Código: 3L

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 420

Encapsulados: SC88

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LBC858CDW1T1G datasheet

 ..1. Size:178K  lrc
lbc858cdw1t1g.pdf pdf_icon

LBC858CDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is 6 5 designed for low power surface mount applications. 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A

 ..2. Size:182K  lrc
lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g lbc856adw1t1g.pdf pdf_icon

LBC858CDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 6 5 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A

 ..3. Size:194K  lrc
lbc856adw1t1g lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g.pdf pdf_icon

LBC858CDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 S- Prefix for Automotive an

 7.1. Size:159K  lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdf pdf_icon

LBC858CDW1T1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

Otros transistores... LBC857BWT1G , LBC857CDW1T1G , LBC857CLT1G , LBC857CWT1G , LBC858ALT1G , LBC858BDW1T1G , LBC858BLT1G , LBC858BWT1G , NJW0281G , LBC858CLT1G , LMBTA05LT1G , LMBTA06LT1G , LMBTA13LT1G , LMBTA14LT1G , LMBTA42LT1G , LMBTA44LT1G , LMBTA55LT1G .

 

 

 


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