LMBT6520LT1G Todos los transistores

 

LMBT6520LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LMBT6520LT1G

Código: 2Z

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 350 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT23

 Búsqueda de reemplazo de LMBT6520LT1G

- Selecciónⓘ de transistores por parámetros

 

LMBT6520LT1G datasheet

 ..1. Size:248K  lrc
lmbt6520lt1g lmbt6520lt3g.pdf pdf_icon

LMBT6520LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon LMBT6520LT1G We declare that the material of product compliance with RoHS requirements. S-LMBT6520LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 Ordering Information 1 Device Marking Shipping 2 LMBT6520LT1G 3000/Tape&

 ..2. Size:248K  lrc
lmbt6520lt1g.pdf pdf_icon

LMBT6520LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon LMBT6520LT1G We declare that the material of product compliance with RoHS requirements. S-LMBT6520LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 Ordering Information 1 Device Marking Shipping 2 LMBT6520LT1G 3000/Tape&

 8.1. Size:248K  lrc
lmbt6517lt1g lmbt6517lt3g.pdf pdf_icon

LMBT6520LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon LMBT6517LT1G We declare that the material of product S-LMBT6517LT1G compliance with RoHS requirements. Ordering Information 3 Device Marking Shipping LMBT6 517LT1G 3000/Tape&Reel 1Z S-LMBT6 517LT1G 1 LMBT6517LT3G 10000/Tape&Reel 1Z 2 S-LMBT6517LT3G SOT 23 MAXIMUM RATINGS Rating Symbol Value Unit 3 COLLECTO

 8.2. Size:248K  lrc
lmbt6517lt1g.pdf pdf_icon

LMBT6520LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon LMBT6517LT1G We declare that the material of product S-LMBT6517LT1G compliance with RoHS requirements. Ordering Information 3 Device Marking Shipping LMBT6 517LT1G 3000/Tape&Reel 1Z S-LMBT6 517LT1G 1 LMBT6517LT3G 10000/Tape&Reel 1Z 2 S-LMBT6517LT3G SOT 23 MAXIMUM RATINGS Rating Symbol Value Unit 3 COLLECTO

Otros transistores... LMBT5401DW1T1G , LMBT5401LT1G , LMBT5541DW1T1G , LMBT5551DW1T1G , LMBT5551LT1G , LMBT6427LT1G , LMBT6428LT1G , LMBT6517LT1G , A42 , LMBT918LT1G , LMBT2222ADW1T1G , LMBT2222ALT1G , LMBT2222ATT1G , LMBT2222AWT1G , LMBT2907ADW1T1G , LMBT2907ALT1G , LMBT2907AWT1G .

History: 2N1751 | 2N1824

 

 

 


History: 2N1751 | 2N1824

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

mpsa06 transistor | tta004b | 2sc1116 | 2n3565 equivalent | 10n60 | 2sc1061 | a1023 | d313 transistor

 

 

↑ Back to Top
.