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LMBT3906WT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LMBT3906WT1G
   Código: 2A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT323 SC70
 

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LMBT3906WT1G Datasheet (PDF)

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LMBT3906WT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLMBT3906WT1GFEATURESS-LMBT3906WT1G1) We declare that the material of product compliant withRoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12DEVICE MARKING AND ORDERING I

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LMBT3906WT1G

 6.1. Size:1148K  lrc
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LMBT3906WT1G

LMBT3906N3T5G3S-LMBT3906N3T5G1General Purpose Transistors PNP Silicon21. FEATURES We declare that the material of product compliance withSOT883RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. COLLECTOR32. DEVICE MARKING AND ORDERING INF

 6.2. Size:357K  lrc
lmbt3906lt1g lmbt3906lt3g.pdf pdf_icon

LMBT3906WT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.LMBT3906LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT3906LT1GORDERING INFORMATION3Device Marking ShippingLMBT3906LT1G 2A3000

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