LNST3904F3T5G Todos los transistores

 

LNST3904F3T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LNST3904F3T5G

Código: 2

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.29 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT1123

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LNST3904F3T5G datasheet

 ..1. Size:196K  lrc
 lnst3904f3t5g.pdf pdf_icon

LNST3904F3T5G

LESHAN RADIO COMPANY, LTD. NPN General Purpose Transistor LNST3904F3T5G The LNST3904F3T5G device is a spin-off of our popular S-LNST3904F3T5G SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package. This device is ideal for COLLECTOR low-power surface mount applications where boar

 7.1. Size:387K  lrc
 lnst3906f3t5g.pdf pdf_icon

LNST3904F3T5G

LESHAN RADIO COMPANY, LTD. PNP General Purpose Transistor LNST3906F3T5G S-LNST3906F3T5G TheLNST3906F3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in COLLECTOR the SOT-1123 surface mount package. This device is ideal for 3 low-power surface mount applications where bo

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