S8550LT1 Todos los transistores

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM -0.5 A Collector-base voltage V(BR)CBO -40 V Unit mm Operating and storage junction temperature range TJ, Tst

SS8550LT1 PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 Value VCEO -25 -40 -5.0 -1500 300 2.4 417 -0.1 -25 -40 -100 -5.0 -100 -0.15 u -40 -0.15 u -5.0 WEITRON 27-Jul-2012 1/2 http //www.weitron.com.tw SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM 0.2 W (Tamb=25 ) Collector current ICM -1.5 A Collector-base voltage V(BR)CBO -25 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELE

KS8550L PNP Silicon Transistor Descriptions PIN Connection High current application Features Complementary pair with KS8050L Ordering Information Type NO. Marking Package Code KU KS8550L SOT-23 Device Code HFE Grade Year& Week Code AUK Dalian Absolute maximum ratings Ta=25 C Characteristic Symbol Ratings Unit Collector-Base

R UMW UMW S8550 SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER Complimentary to S8050 3. COLLECTOR Collector current IC=0.5A MARKING 2TY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Volta

R UMW UMW SS8550 SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EB

S8550 PLASTIC-ENCAPSULATE TRANSISTORS PNP Silicon FEATURES Collector Current IC = -0.5A MECHANICAL DATA C Available in SOT-23 Package E Solderability MIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE S8550 - -T3 SOT-23 Tape Reel 2TY Notes 1. none is for Lead Free package;

Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= -500mA Complementary To S8050. Excellent HFE Linearity. APPLICATIONS High Collector Current. ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified 1 of 3 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified CLASSIFICATION OF hFE(1) 2 of 3 TYPICAL CHARAC

SS8550 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter Collector Current IC=-1.5A 1 3.Collector Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1.5 A Collector Power Dissipation PC 0.3 W Junc

SS8550 TRANSISTOR (PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector Power Diss

S8550 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8050 ; Complementary to S8050 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

SS8550 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8050 ; Complementary to SS8050 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

R S8550 S E M I C O N D U C T O R TRANSISTOR(PNP) SOT-23 FEATURES Complimentary to S8050 1. BASE Collector current I =0.5A C 2. EMITTER 3. COLLECTOR MARKING 2TY MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO VEBO Emitter-Base Voltage -5 V I Collector Current

MMBTS8550 PNP Silicon Tr ansistors Features Collector current IC=0.5A SOT23 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector Base Voltage -40 VCBO V VCEO -25 V Collector Emitter Voltage (B) (C) -5 (A) Emitter Base Voltage VEBO V A Collector Current Continuous IC -0.5 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.

S8550 Features Complimentary to S8050 Collector current IC=-0.5A SOT-23 A MARKING 2TY Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 J 0.013 0.10 K K 0.903 1.10 J MAXIMUM RATINGS (Ta=25 unless otherwise noted) L 0.45 0.61 M

SS8550 Features Complimentary to SS8050 Collector current IC= -1.5A SOT-23 A MARKING Y2 Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 J 0.013 0.10 K K 0.903 1.10 J L 0.45 0.61 M 0.085 0.180 MAXIMUM RATINGS (Ta=25 unless othe