DTC311
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC311
Código: 8M
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.202
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta:
SOT323
Búsqueda de reemplazo de transistor bipolar DTC311
DTC311
Datasheet (PDF)
0.1. Size:584K first silicon
dtc301-dtc311 dtc317 dtc322 dtc323.pdf
DTC301~311 / DTC317SEMICONDUCTORTECHNICAL DATA DTC322~323Bias Resistor TransistorsNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network2consisti
9.1. Size:66K rohm
dtc314tk dtc314tu-tk h04 sot323 346.pdf
TransistorsDigital transistors (built-in resistor)DTC314TU / DTC314TK / DTC314TSFFeatures FExternal dimensions (Units: mm)In addition to the features of regular dig-ital transistors,1) Low saturation voltage, typicallyVCE(sat) = 40mV at IC / IB = 50mA /2.5mA, makes these transistorsideal for muting circuits.2) These transistors can be used athigh current levels, IC = 600mA
9.2. Size:66K rohm
dtc314tu.pdf
TransistorsDigital transistors (built-in resistor)DTC314TU / DTC314TK / DTC314TSFFeatures FExternal dimensions (Units: mm)In addition to the features of regular dig-ital transistors,1) Low saturation voltage, typicallyVCE(sat) = 40mV at IC / IB = 50mA /2.5mA, makes these transistorsideal for muting circuits.2) These transistors can be used athigh current levels, IC = 600mA
9.3. Size:90K chenmko
chdtc314tkgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC314TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA
9.4. Size:95K chenmko
chdtc314tugp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC314TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at I
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