DTD124 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTD124
Código: E1
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT23
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DTD124 datasheet
..1. Size:140K first silicon
dtd124.pdf 
SEMICONDUCTOR DTD124 TECHNICAL DATA NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an 2 inverter circuit without connecting external input resistors (see equivalent circuit). 1 2) The bias resistors consist of thin-film resistors with S
9.1. Size:123K philips
pdtd123e ser.pdf
PDTD123E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123EK SOT346 SC-59A TO-236 PDTB123EK PDTD123ES[1] SOT54 SC-43A TO-92
9.2. Size:121K nxp
pdtd123t.pdf
PDTD123T series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = open Rev. 03 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123TK SOT346 SC-59A TO-236 PDTB123TK PDTD123TS[1] SOT54 SC-43A TO-92 PD
9.3. Size:120K nxp
pdtd123tk pdtd123ts.pdf
PDTD123T series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = open Rev. 03 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123TK SOT346 SC-59A TO-236 PDTB123TK PDTD123TS[1] SOT54 SC-43A TO-92 PD
9.4. Size:124K nxp
pdtd123y.pdf
PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123YK SOT346 SC-59A TO-236 PDTB123YK PDTD123YS[1] SOT54 SC-43A TO-92
9.5. Size:123K nxp
pdtd123ek pdtd123es.pdf
PDTD123E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123EK SOT346 SC-59A TO-236 PDTB123EK PDTD123ES[1] SOT54 SC-43A TO-92
9.6. Size:124K nxp
pdtd123yk pdtd123ys.pdf
PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123YK SOT346 SC-59A TO-236 PDTB123YK PDTD123YS[1] SOT54 SC-43A TO-92
9.7. Size:329K rohm
dtd123tk.pdf
DTD123TK Datasheet NPN 500mA 40V Digital Transistors (Bias Resistor Built-in Transistors) lOutline SMT3 Parameter Value Collector VCEO 40V Base IC 500mA Emitter R 2.2kW DTD123TK SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (
9.9. Size:58K rohm
dtd123ek dtd123es.pdf
Transistors Digital transistors (built-in resistors) DTD123EK / DTD123ES FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing of the input. They
9.10. Size:156K rohm
dtd123yk.pdf
Digital transistors (built-in resistors) DTD123YK Applications Dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD123YK 0.4 0.8 Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete (2) (1)
9.11. Size:136K rohm
dtd123ek.pdf
500mA / 50V Digital transistors (with built-in resistors) DTD123EK Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD123EK 2.9 1.1 Features 1)Built-in bias resistors enable the configuration of an inverter 0.4 0.8 circuit without connecting external input resistors (see (3) equivalent circuit). 2)The bias resistors consist of thin-film resistors
9.12. Size:167K diodes
ddtd123eu.pdf
DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
9.13. Size:164K diodes
ddtd122lc.pdf
DDTD (LO-R1) C NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A SOT-23 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors A 0.37 0.51 Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEW B C B 1.20 1.40 "Green" Device (No
9.14. Size:163K diodes
ddtd122lu.pdf
DDTD (LO-R1) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary PNP Types Available (DDTB) SOT-323 Built-In Biasing Resistors Dim Min Max Lead Free/RoHS Compliant (Note 2) A 0.25 0.40 "Green" Device, Note 3 and 4 B C B 1.15 1.35 Mechanical Data C 2.00 2.20 Case SOT-323 D 0.65 Nominal
9.15. Size:167K diodes
ddtd123tu.pdf
DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
9.16. Size:70K diodes
ddtd123yc.pdf
DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Complementary PNP Types Available (DDTB) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
9.17. Size:167K diodes
ddtd122ju.pdf
DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
9.18. Size:167K diodes
ddtd123yu.pdf
DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
9.19. Size:70K diodes
ddtd123ec.pdf
DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Complementary PNP Types Available (DDTB) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
9.20. Size:70K diodes
ddtd122jc.pdf
DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Complementary PNP Types Available (DDTB) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
9.21. Size:164K diodes
ddtd122tc.pdf
DDTD (LO-R1) C NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A SOT-23 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors A 0.37 0.51 Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEW B C B 1.20 1.40 "Green" Device (No
9.22. Size:163K diodes
ddtd122tu.pdf
DDTD (LO-R1) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary PNP Types Available (DDTB) SOT-323 Built-In Biasing Resistors Dim Min Max Lead Free/RoHS Compliant (Note 2) A 0.25 0.40 "Green" Device, Note 3 and 4 B C B 1.15 1.35 Mechanical Data C 2.00 2.20 Case SOT-323 D 0.65 Nominal
9.23. Size:70K diodes
ddtd123tc.pdf
DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Complementary PNP Types Available (DDTB) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
9.24. Size:131K utc
dtd123y.pdf
UNISONIC TECHNOLOGIES CO., LTD DTD123Y NPN SILICON TRANSISTOR DIGITAL TRANSISTORS 3 3 (BUILT-IN RESISTORS) 1 1 2 2 FEATURES SOT-323 SOT-23 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT 1 TO-92 ORDERING INFORMATION Ordering Number
9.25. Size:1033K wietron
dtd123y.pdf
DTD123Y Bias Resistor Transistor NPN Silicon COLLECTOR 3 3 P b Lead(Pb)-Free R 1 1 1 BASE R 2 2 2 EMITTER SOT-23 Absolute maximum ratings (TA = 25 C) Parameter Symbol Limits Unit Supply voltage Vcc 50 V -5 +12 Input voltage VIN V Output current IC 500 mA Power dissipation Pd 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 +150 Electrical characteristics
9.26. Size:369K lrc
ldtd123ylt1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD123YLT1G with Monolithic Bias Resistor Network S-LDTD123YLT1G Applications Inverter, Interface, Driver Features 3 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 1 2) The bias res
9.27. Size:350K lrc
ldtd123yet1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD123YET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist
9.28. Size:326K lrc
ldtd123tet1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD123TET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist
9.29. Size:367K lrc
ldtd123eet1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD123EET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist
9.30. Size:369K lrc
ldtd123ylt1g ldtd123ylt3g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD123YLT1G with Monolithic Bias Resistor Network S-LDTD123YLT1G Applications Inverter, Interface, Driver Features 3 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 1 2) The bias res
9.31. Size:193K first silicon
dtd123.pdf
SEMICONDUCTOR DTD123 TECHNICAL DATA NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver OUT Features 1) Built-in bias resistors enable the configuration of an GND inverter circuit without connecting external input IN resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors wi
9.32. Size:319K kexin
dtd123yua.pdf
SMD Type Transistors Digital Transistors DTD123YUA (KDTD123YUA) Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost complet
9.33. Size:98K chenmko
chdtd123ekgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTD123EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi
9.34. Size:103K chenmko
chdtd123tkgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTD123TKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil
9.35. Size:138K chenmko
chdtd123ykgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTD123YKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi
9.36. Size:62K chenmko
chdtd122jkgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTD122JKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil
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