FTA1037AK . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FTA1037AK
Código: FQ_G3F_FR
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar FTA1037AK
FTA1037AK Datasheet (PDF)
fta1037ak.pdf
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fta1036k.pdf
SEMICONDUCTORFTA1036KTECHNICAL DATAMedium Power Transistor( 32V, 0.5A)Features1) Large IC.I = 500mACMax332) Low V . Ideal for low-voltageCE(sat)operation.13) We declare that the material of productcompliance with RoHS requirements.122StructureEpitaxial planar typePNPSOT-23PNP silicon transistorDEVICE MARKING1) FTA1036K-P = HP2) FTA1036K-Q
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SEMICONDUCTORFTA1020TECHNICAL DATAFEATURES B Power Amplifier Applications Complementary to FTC26555 EDIM MILLIMETERSMAXIMUM RATINGS (Ta=25 unless otherwise noted) A 8.2 MAXDB 5.1 MAXSymbol Parameter Value Unit C 1.58 MAXD 0.55 MAXE 0.7 TYPVCBO Collector-Base Voltage -50 V F 1.27 TYPG 2.54 TYPVCEO Collector-Emitter Voltage -50 V FH 14.20 MAX G
fta1015.pdf
SEMICONDUCTORFTA1015TECHNICAL DATAB CFEATURES TO-92 PNP TransistorDIM MILLIMETERSA 4.70 MAXEMAXIMUM RATINGS (TA=25 unless otherwise noted) B 4.80 MAXGC 3.70 MAXDD 0.55 MAXSymbol Parameter Value Units E 1.00F 1.27VCBO Collector-Base Voltage -50 V G 0.85H 0.45_HJ 14.00 + 0.50VCEO Collector-Emitter Voltage -50 V L 2.30F FM 0.51 MAXVEBO Emit
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