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FTA1662 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FTA1662
   Código: FO_FY
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 14 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT89

 Búsqueda de reemplazo de transistor bipolar FTA1662

 

FTA1662 Datasheet (PDF)

 ..1. Size:102K  first silicon
fta1662.pdf

FTA1662
FTA1662

SEMICONDUCTORFTA1662TECHNICAL DATAFEATURES AComplementary to FTC4374 CHGMAXIMUM RATINGS (TA=25 unless otherwise noted) DDSymbol Parameter Value UnitsKVCBO Collector-Base Voltage -80 V F FDIM MILLIMETERSA 4.70 MAXVCEO Collector-Emitter Voltage -80 V _+B 2.50 0.20C 1.70 MAXVEBO Emitter-Base Voltage -5 V 1 2 3D 0.45+0.15/-0.10E 4.25 MAXIC Colle

 8.1. Size:1051K  first silicon
fta1666.pdf

FTA1662
FTA1662

SEMICONDUCTORFTA1666TECHNICAL DATAACHGFTA1666 TRANSISTOR (PNP) D DKFEATURES F FDIM MILLIMETERS Complementary to FTC4379 A 4.70 MAX_+B 2.50 0.20C 1.70 MAX Small Flat Package 1 2 3D 0.45+0.15/-0.10E 4.25 MAX Low Saturation Voltage _+F 1.50 0.10G 0.40 TYP1. BASE Power Amplifier and Switching Application H 1.7 MAX2. COLLECTORJ 0.7 MIN

 8.2. Size:100K  first silicon
fta1661.pdf

FTA1662

SEMICONDUCTORFTA1661TECHNICAL DATAACHPNP TransistorGFEATURES DDK Small Flat Package F FDIM MILLIMETERS High Current Application A 4.70 MAX_+B 2.50 0.20 High Voltage C 1.70 MAX1 2 3D 0.45+0.15/-0.10 High Transition Frequency E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3. EMITTERK 0.5+0.15/-0.10SOT-8

 8.3. Size:328K  first silicon
fta1664.pdf

FTA1662
FTA1662

SEMICONDUCTORFTA1664TECHNICAL DATAACHGFTA1664 TRANSISTOR (PNP) FEATURES DDK Complementary to FTC4376 F FDIM MILLIMETERS Small Flat Package A 4.70 MAX_+B 2.50 0.20 High Current Application C 1.70 MAX1 2 3D 0.45+0.15/-0.10E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3. EMITTERK 0.5+0.15/-0.10SOT-89MAX

 8.4. Size:140K  first silicon
fta1663.pdf

FTA1662
FTA1662

SEMICONDUCTORFTA1663TECHNICAL DATAPNP TransistorAFEATURES CH High current applications G Complementary to FTC4375 DDMAXIMUM RATINGS (TA=25 unless otherwise noted)KF FDIM MILLIMETERSSymbol Parameter Value UnitsA 4.70 MAX_+B 2.50 0.20VCBO Collector-Base Voltage -30 V C 1.70 MAX1 2 3D 0.45+0.15/-0.10VCEO Collector-Emitter Voltage -30 V E 4.25 MAX

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BU208A | MPS3567 | 2SC1946A | 2SC1811-2

 

 
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