FTB1116A Todos los transistores

 ..1. Size:260K  first silicon
 ftb1116a.pdf

SEMICONDUCTOR FTB1116A TECHNICAL DATA Ge e u po e s o PNP Silicon B C FEATURES * High Collector Power Dissipation * Complementary NPN Type available (FTD1616A) DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX MAXIMUM RATINGS (TA=25 unless otherwise noted) E 1.00 Parameter Value Units F 1.27 Symbol G 0.85 H 0.45 VCBO Collector-Base Voltage -80 V

 9.1. Size:1256K  first silicon
 ftb1197k.pdf

SEMICONDUCTOR FTB1197K TECHNICAL DATA Low Frequency Transistor PNP Silicon FEATURE 3 High current capacity in compact package. 2 IC = 0.8A. Epitaxial planar type. 1 NPN complement FTB1781K SOT 23 We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Marking Shipping Device 3 FTB1197KQLT1G AHQ 3000/Tape&Reel

 9.2. Size:233K  first silicon
 ftb1151.pdf

SEMICONDUCTOR FTB1151 TECHNICAL DATA D FTB1151 TRANSISTOR (PNP) E A C FEATURES F G DIM MILLIMETERS B A 8.3 MAX Low Collector-Emitter Saturation Voltage B 11.3 0.3 C 4.15 TYP 1 2 3 Large Collector Current D 3.2 0.2 E 2.0 0.2 High Power Dissipation H F 2.8 0.1 I G 3.2 0.1 Complement to FTD1691 H 1.27 0.1 K I 1.40 0.1 15.5 0.2 K L 0.76 0.1 M 2.28 TYP

 9.3. Size:256K  first silicon
 ftb1184.pdf

SEMICONDUCTOR FTB1184 TECHNICAL DATA FTB1184 TRANSISTOR (PNP) A I C FEATURES J Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the FTD1760 DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2 E 2 70 0 2 Symbol Parameter Value Unit F 2 30 0 1 H H 1 00 MAX VCBO Collector Bas