FTB1197K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FTB1197K
   Código: AHQ_AHR
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar FTB1197K

FTB1197K Datasheet (PDF)

..1. Size:1256K first silicon
ftb1197k.pdf

SEMICONDUCTORFTB1197KTECHNICAL DATALow Frequency TransistorPNP SiliconFEATURE 3High current capacity in compact package.2IC = 0.8A.Epitaxial planar type. 1NPN complement: FTB1781K SOT 23 We declare that the material of product compliance with RoHS requirements.DEVICE MARKING AND ORDERING INFORMATION Marking Shipping Device3 FTB1197KQLT1G AHQ 3000/Tape&Reel

9.1. Size:260K first silicon
ftb1116a.pdf

SEMICONDUCTORFTB1116ATECHNICAL DATAGe e u po e s oPNP Silicon B CFEATURES * High Collector Power Dissipation* Complementary NPN Type available (FTD1616A)DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXMAXIMUM RATINGS (TA=25 unless otherwise noted) E 1.00Parameter Value Units F 1.27Symbol G 0.85H 0.45VCBO Collector-Base Voltage -80 V

9.2. Size:233K first silicon
ftb1151.pdf

SEMICONDUCTORFTB1151TECHNICAL DATADFTB1151 TRANSISTOR (PNP) EA CFEATURES F GDIM MILLIMETERSBA 8.3 MAX Low Collector-Emitter Saturation Voltage B 11.30.3C 4.15 TYP1 2 3 Large Collector Current D 3.20.2E 2.00.2 High Power Dissipation H F 2.80.1IG 3.20.1 Complement to FTD1691 H 1.270.1KI 1.400.115.50.2KL 0.760.1M 2.28 TYP

9.3. Size:256K first silicon
ftb1184.pdf

SEMICONDUCTORFTB1184TECHNICAL DATAFTB1184 TRANSISTOR (PNP) AICFEATURES JLow VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the FTD1760 DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2E 2 70 0 2Symbol Parameter Value Unit F 2 30 0 1HH 1 00 MAXVCBO Collector Bas

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SB1259

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050