FTC4377
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FTC4377
Código: SA_SB_SC_SD
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 10
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Capacitancia de salida (Cc): 27
pF
Ganancia de corriente contínua (hfe): 140
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar FTC4377
FTC4377
Datasheet (PDF)
..1. Size:370K first silicon
ftc4377.pdf 
SEMICONDUCTORFTC4377TECHNICAL DATA FTC4377 TRANSISTOR (NPN) ACHGFEATURES Low voltage Low Vce(sat) : 0.5V Max (Ic=2A, IB=0.05A) DDKF FDIM MILLIMETERSA 4.70 MAXMAXIMUM RATINGS (Ta=25unless otherwise noted)_+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10Symbol Parameter Value UnitE 4.25 MAX_+F 1.50 0.10VCBO Collector-Base Voltage 30 V G 0.40
8.1. Size:86K first silicon
ftc4375.pdf
SEMICONDUCTORFTC4375TECHNICAL DATAFEATURES ACSOT-89 NPN Transistor HGMAXIMUM RATINGS (TA=25 unless otherwise noted) DDKSymbol Parameter Value Units F FDIM MILLIMETERSA 4.70 MAXVCBO Collector-Base Voltage 30 V _+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10VCEO Collector-Emitter Voltage 30 V E 4.25 MAX_+F 1.50 0.10VEBO Emitter-Base Voltage 5 V
8.2. Size:81K first silicon
ftc4374.pdf
SEMICONDUCTORFTC4374TECHNICAL DATAFEATURES Complementary to FTA1662AC HGMAXIMUM RATINGS (TA=25 unless otherwise noted) DSymbol Parameter Value UnitsDKVCBO Collector-Base Voltage 80 V F FDIM MILLIMETERSVCEO Collector-Emitter Voltage 80 V A 4.70 MAX_+B 2.50 0.20C 1.70 MAXVEBO Emitter-Base Voltage 5 V 1 2 3D 0.45+0.15/-0.10E 4.25 MAXIC Collecto
8.3. Size:165K first silicon
ftc4378.pdf
SEMICONDUCTORFTC4378TECHNICAL DATAACHGFTC4378 TRANSISTOR (NPN) FEATURES DDKHigh voltage F FDIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20C 1.70 MAXMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 2 3D 0.45+0.15/-0.10E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MINVCBO Collector-Base Volt
8.4. Size:222K first silicon
ftc4370a.pdf
SEMICONDUCTORFTC4370A TECHNICAL DATACAE DIM MILLIMETERSFTC4370A TRANSISTOR (NPN) _A 10.16 0.20+_B 15.00 0.20+_C 3.00 0.20+D 0.6250.125E 3.50 typFEATURES F 2.7 typ_G 16.80 0.4+L High Transition Frequency M_+R H 0.45 0.1_J 13.20 + 0.20 Complementary to FTA1659A _K 3.80 0.2+DL 1.52 MAX High Voltage Application M 1.52 MAX
8.5. Size:314K first silicon
ftc4379.pdf
SEMICONDUCTORFTC4379TECHNICAL DATAACHGFTC4379 TRANSISTOR (NPN) D DKFEATURES F FDIM MILLIMETERS Complementary to FTA1666 A 4.70 MAX_+B 2.50 0.20C 1.70 MAX Small Flat Package 1 2 3D 0.45+0.15/-0.10E 4.25 MAX Low Saturation Voltage _+F 1.50 0.10G 0.40 TYP1. BASE Power Amplifier and Switching Application H 1.7 MAX2. COLLECTORJ 0.7 MIN
8.6. Size:266K first silicon
ftc4376.pdf
SEMICONDUCTORFTC4376TECHNICAL DATAACHGFTC4376 TRANSISTOR (NPN) DFEATURES DK Small Flat Package F FDIM MILLIMETERSA 4.70 MAX High Current Application _+B 2.50 0.20C 1.70 MAX Complementary to FTA1664 1 2 3D 0.45+0.15/-0.10E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3. EMITTERK 0.5+0.15/-0.10SOT-89MAXIM
8.7. Size:100K first silicon
ftc4373.pdf
SEMICONDUCTORFTC4373TECHNICAL DATAACHNPN TransistorGFEATURES DDK Small Flat Package F FDIM MILLIMETERS High Current Application A 4.70 MAX_+B 2.50 0.20 High Voltage C 1.70 MAX1 2 3D 0.45+0.15/-0.10 High Transition Frequency E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3. EMITTERK 0.5+0.15/-0.10SOT-8
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