FTD880 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTORFTD880TECHNICAL DATA FTD880 TRANSISTOR (NPN) AO FEATURES CF Low Frequency Power Amplifier E Complement to FTB834 BDIM MILLIMETERSA 10.15 0.15 B 15.30 MAXC 1.3+0.1/-0.15PD 0.8 0.1MAXIMUM RATINGS (Ta=25 unless otherwise noted)E 3.8 0.2F 2.7 0.2JH 0.4 0.15Symbol Parameter Value Unit DJ 13.6 0.2N 2.54 0.2HN

SEMICONDUCTORFTD882FTECHNICAL DATA AFTD882F NPN TRANSISTORCHGFEATURES Power dissipation DDKF FDIM MILLIMETERSA 4.70 MAXMAXIMUM RATINGS (Ta=25 unless otherwise noted) _+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10Symbol Parameter Value Unit E 4.25 MAX_+F 1.50 0.10VCBO Collector-Base Voltage 40 V G 0.40 TYP1. BASEH 1.8 MAX2. COLLE

SEMICONDUCTORFTD882TECHNICAL DATAAUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGDEAFEATURESComplementary to FTB772. CF GDIM MILLIMETERSBA 8.3 MAXMAXIMUM RATING (Ta=25 )B 11.30.3C 4.15 TYP1 2 3CHARACTERISTIC SYMBOL RATING UNIT D 3.20.2E 2.00.2H F 2.80.1VCBOCollector-Base Voltage 40 V IG 3.20.1H 1.270.1VCEO KCollector-Emitter V

SEMICONDUCTORFTD882DTECHNICAL DATAFTD882D TRANSISTORAI FEATURESCJ Low Speed SwitchingDIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2E 2 70 0 2F 2 30 0 1Symbol Parameter Value Unit HH 1 00 MAXI 2 30 0 2LF FVCBO Collector-Base Voltage 40 V J 0 5 0 1L 0 50 0 101 2 3