MJE13002B Todos los transistores

 

MJE13002B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13002B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 9

Encapsulados: TO92

 Búsqueda de reemplazo de MJE13002B

- Selecciónⓘ de transistores por parámetros

 

MJE13002B datasheet

 ..1. Size:78K  first silicon
mje13002b.pdf pdf_icon

MJE13002B

SEMICONDUCTOR MJE13002B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS ton=0.5 S(Max.), tf=0.7 S(Max.), at IC=0.8A A 4 70 MAX E K B 4 80 MAX High Collector Voltage VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _

 6.1. Size:304K  motorola
mje13002.pdf pdf_icon

MJE13002B

Order this document MOTOROLA by MJE13002/D SEMICONDUCTOR TECHNICAL DATA * MJE13002 MJE13003* Designer's Data Sheet *Motorola Preferred Device SWITCHMODE Series 1.5 AMPERE NPN SILICON NPN Silicon Power Transistors POWER TRANSISTORS 300 AND 400 VOLTS These devices are designed for high voltage, high speed power switching 40 WATTS inductive circuits where fall time is criti

 6.2. Size:276K  utc
mje13002-e.pdf pdf_icon

MJE13002B

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in high volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator s,inverters, DC-DC converter, Motor con

 6.3. Size:303K  utc
mje13002g.pdf pdf_icon

MJE13002B

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in high volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator s,inverters, DC-DC converter, Motor co

Otros transistores... FTD2114K , FTD2118 , FTD4240 , FTD880 , FTD882 , FTD882D , FTD882F , MJD122I , TIP2955 , MJE13003A , MJE13003I , MJE13003T , MJE13005T , MMBTA42F , MMBTA92F , MMBTH10Q , A966O .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

irf540z | ss8550 transistor | irfp240 mosfet | tip141 | 2n404 | 2n4250 | d882 transistor equivalent | 17n80c3

 

 

↑ Back to Top
.