13003B Todos los transistores

R 13003B www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 F

UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130

BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2 A B Range 2-2.5 ( s) 2.5-3 ( s) E F Product-Rank BD13003B-B1 BD13003B-B2 C N H Range 3-3.5 ( s) 3.5

3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E C F 0.36 0.51 F G 1.27 TYP. H 1.10 - J 2

TS13003B High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

TS13003B High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR( NPN ) 1. EMITTER 2. COLLECTOR FEATURES 3. BASE power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol

3DD13003B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 2. COLLECTOR 5.21 3. BASE 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 2.03 4.19 Symbol Parameter Value Units 2.67 1.14 VCBO Collector-Base Voltage 700 V 1.40 2.03 2.67 VCEO Collector-Emitter Voltage 400 V

WEITRON 3DD13003B NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES power switching applications TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25 C Parameter Symbol Value Units Collector-Base Voltage V VCBO 700 Collector-Emitter Voltage V VCEO 400 Emitter-Base Voltage 9 V VEBO A Collector Current -Continuous IC 1.5 Col

WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enh

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJ

SEMICONDUCTOR MJE13003B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS ton=0.5 S(Max.), tf=0.7 S(Max.), at IC=1A A 4 70 MAX E K B 4 80 MAX High Collector Voltage VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _ MA

WBR13003B2 WBR13003B2 WBR13003B2 WBR13003B2 High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par

SBR13003B SBR13003B SBR13003B SBR13003B High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Paramet

WBN13003B2D WBN13003B2D WBN13003B2D WBN13003B2D High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply.

WBR13003B3 WBR13003B3 WBR13003B3 WBR13003B3 High Voltage Fast -Switching NPN Power Transistor High Voltage Fast -Switching NPN Power Transistor High Voltage Fast -Switching NPN Power Transistor High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for

SBR13003BD SBR13003BD SBR13003BD SBR13003BD HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switchin

WBN13003B WBN13003B WBN13003B WBN13003B HighVoltageFast-SwitchingNPNPowerTransistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter Tes

WBR13003B2D WBR13003B2D WBR13003B2D WBR13003B2D High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply.

WBR13003B WBR13003B WBR13003B WBR13003B HighVoltageFast-SwitchingNPNPowerTransistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter Tes

SBR13003B1 SBR13003B1 SBR13003B1 SBR13003B1 High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description G

SBU13003BD High Voltage Fast-Switching NPN Power Transistor Features symbol Very High Switching Speed 2.Collector High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Rat

SL13003 TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25