2N6529 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6515/DHigh Voltage TransistorsNPN2N6515*COLLECTOR COLLECTOR thru 2N65173 3PNP2 22N6519BASE BASENPN PNP2N6520*1 1Voltage and current are negativeEMITTER EMITTER for PNP transistorsMAXIMUM RATINGS*Motorola Preferred Device2N6516 2N65172N6519 2N6520Rating Symbol 2N6515 UnitCollectorEm

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6515/DHigh Voltage TransistorsNPNCOLLECTOR COLLECTOR2N65153 32N65172 2PNPBASE BASENPN PNP2N65191 1EMITTER EMITTER2N6520MAXIMUM RATINGSVoltage and current are negative2N6517 for PNP transistors2N6520Rating Symbol 2N6515 2N6519 UnitCollectorEmitter Voltage VCEO 250 300 350 VdcCollector

June 20092N6520PNP Epitaxial Silicon TransistorFeatures High Voltage Transistor Collector-Emitter Voltage: VCBO= -350V Collector Dissipation: PC (max)=625mW Complement to 2N6517TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Unit VCBO Collector-Base Voltage -350 V VCEO Collector-Emitte

2N6520 PNP EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORTO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Base Current IB -250 mA Collector Dissipation PC 0.625 WDerate above 25 5 mW/ Junction Temperature TJ

NPN - 2N6515, 2N6517;PNP - 2N6520High Voltage TransistorsNPN and PNPFeatureshttp://onsemi.com Voltage and Current are Negative for PNP TransistorsCOLLECTOR These are Pb-Free Devices*32BASEMAXIMUM RATINGSCOLLECTORNPNRating Symbol Value Unit31Collector - Emitter Voltage VCEO VdcEMITTER2N6515 25022N6517, 2N6520 350BASECollector - Base Voltage V

2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES High voltage transistors TO-92 G HCollectorJMillimeterREF. A DMin. Max.A 4.40 4.70BB 4.30 4.70C 12.70 -KD 3.30 3.81Base E 0.36 0.56F 0.36 0.51 E C F G 1.

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N65192N6516, 2N65202N6517TO-92Plastic PackageHIGH VOLTAGE TRANSISTORSABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N6515 2N6516 2N6517 UNIT2N6519 2N6520VCEOCollector Emitter Voltage 250 300 350 VV

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 2N6520 TRANSISTOR (PNP)1. EMITTERFEATURES 2. BASE Complement to 2N65173. COLLECTOR Equivalent Circuit 2N6520=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

SEMICONDUCTOR2N6520 TECHNICAL DATAB C2N6520 TRANSISTOR (PNP) DIM MILLIMETERSFEATURES A 4.70 MAXEB 4.80 MAXGC 3.70 MAX Complement to 2N6517 DD 0.55 MAXE 1.00F 1.27G 0.85H 0.45_HJ 14.00 0.50L 2.30F FM 0.51 MAX1 2 3 1. EMITTER2. BASE3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) TO-92Symbol Parameter Value Unit VCBO Collect