2N6530 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6530
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 26 W
Tensión colector-base (Vcb): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO66
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2N6530 Datasheet (PDF)
2n6535.pdf

2N6535Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 100V IC = 8A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n6537.pdf

2N6537Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 120V IC = 8A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n6534.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6534 DESCRIPTION With TO-66 package DARLINGTON APPLICATIONS Power switching Hammer drivers Series and shunt regulators Audio amplifiers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMET
Otros transistores... 2N6524 , 2N6525 , 2N6526 , 2N6527 , 2N6528 , 2N6529 , 2N652A , 2N653 , 2SA1943 , 2N6531 , 2N6532 , 2N6533 , 2N6534 , 2N6535 , 2N6536 , 2N6537 , 2N6538 .
History: BC846W | KT8143M | KSC900G | Q-00369C | BF883 | FMMTL717 | BUJ403A
History: BC846W | KT8143M | KSC900G | Q-00369C | BF883 | FMMTL717 | BUJ403A



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