P13003D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: P13003D
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO126D

Búsqueda de reemplazo de transistor bipolar P13003D

P13003D Datasheet (PDF)

..1. Size:116K jdsemi
p13003d.pdf

RP13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.1. Size:395K winsemi
wbp13003d.pdf

WBP13003DWBP13003DWBP13003DWBP13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such

0.2. Size:560K winsemi
sbp13003d.pdf

SBP13003DSBP13003DSBP13003DSBP13003DHigh Voltage Fast -Switching NPN Power TransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics requir

8.1. Size:113K jdsemi
p13003.pdf

RP13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampCharger and Switch-mode power supplies 222FEATURES 2

8.2. Size:445K winsemi
sbp13003h.pdf

SBP13003HSBP13003HSBP13003HSBP13003HHigh Voltage Fast -Switching NPN Power TransistorFeaturesVery High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedSwitching characteristics required such as lightingsystem, switching mode power supply.Absolute Maximum RatingsSymbol Parameter

8.3. Size:364K winsemi
sbp13003o.pdf

SBP13003-OSBP13003-OSBP13003-OSBP13003-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

8.4. Size:160K semiwell
sbp13003.pdf

SBP13003SemiWell SemiconductorHigh Voltage Fast-Switching NPN Power TransistorFeaturesSymbol2.Collector- Very High Switching Speed - Minimum Lot-to-Lot hFE Variation1.Base - Short storge time- Wide Reverse Bias S.O.A3.EmitterGeneral DescriptionTO-220This devices is designed for high voltage, high speed switchingcharacteristic,especially suitable for ba

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: H1616 | KT720A | STL72 | 2SC1327

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