DTA113ZM
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA113ZM
Código: E11
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 33
Paquete / Cubierta:
SOT723
Búsqueda de reemplazo de transistor bipolar DTA113ZM
DTA113ZM
Datasheet (PDF)
..1. Size:1147K kexin
dta113zm.pdf
SMD Type TransistorsDigital TransistorsDTA113ZM (KDTA113ZM)SOT-723 Unit:mm Features1 Built-in bias resistors enable the configuration of an inverter circuit32 without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete0.80 0.050.50 (max) isolation to allow positive biasing of the inpu
7.1. Size:114K nxp
pdta113zk pdta113zs.pdf
PDTA113Z seriesPNP resistor-equipped transistors; R1 = 1 k, R2 = 10 kRev. 04 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP resistor-equipped transistors.Table 1. Product overviewType number Package NPN complementNXP JEITAPDTA113ZE SOT416 SC-75 PDTC113ZEPDTA113ZK SOT346 SC-59 PDTC113ZKPDTA113ZM SOT883 SC-101 PDTC113ZMPDTA113ZS[1
7.2. Size:111K nxp
pdta113z.pdf
PDTA113Z seriesPNP resistor-equipped transistors; R1 = 1 k, R2 = 10 kRev. 04 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP resistor-equipped transistors.Table 1. Product overviewType number Package NPN complementNXP JEITAPDTA113ZE SOT416 SC-75 PDTC113ZEPDTA113ZK SOT346 SC-59 PDTC113ZKPDTA113ZM SOT883 SC-101 PDTC113ZMPDTA113ZS[1
7.3. Size:1111K rohm
dta113zefra dta113zkafra dta113zuafra.pdf
DTA113Z seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT3 UMT3VCC-50VIC(MAX.)-100mA R11kDTA113ZE DTA113ZUAR2 SOT-416(SC-75A) SOT-323(SC-70)10k SMT3 lFeaturesl1) Built-In Biasing Resistors2) Built-in bias
7.4. Size:69K rohm
dta113zua dta113zxx e11sot416 111sot323 e11sot346.pdf
TransistorsDigital transistors (built-in resistors)DTA113ZE / DTA113ZUA / DTA113ZKA /DTA113ZSAFFeatures FExternal dimensions (Units: mm)1) The built-in bias resistor allows theconfiguration of an inverter circuitwithout connecting any external in-put resistors (see Equivalent cir-cuit).2) Each bias resistor is a thin-film re-sistor. Since they are completely in-sulated,
7.5. Size:81K rohm
dta113ze.pdf
TransistorsDigital transistors (built-in resistors)DTA113ZE / DTA113ZUA / DTA113ZKA /DTA113ZSAFFeatures FExternal dimensions (Units: mm)1) The built-in bias resistor allows theconfiguration of an inverter circuitwithout connecting any external in-put resistors (see Equivalent cir-cuit).2) Each bias resistor is a thin-film re-sistor. Since they are completely in-sulated,
7.6. Size:93K diodes
ddta113ze.pdf
DDTA (R1R2 SERIES) PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary NPN Types Available (DDTC) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors, R1R2 Moisture Sensitivity: L
7.7. Size:191K diodes
ddta113zka.pdf
DDTA (R1R2 SERIES) KA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 Mechanical Data B 1.50 1.70 C 2.70 3.00 Case: SC
7.8. Size:176K diodes
ddta113zca.pdf
DDTA (R1R2 SERIES) CA PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction SOT-23 A Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.37 0.51 Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40
7.9. Size:188K diodes
ddta113zua.pdf
DDTA (R1R2 SERIES) UA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 "Green" Device (Note 2 & 3) B CC 2.00 2.20 Mechanical Data D 0.65 No
7.10. Size:252K jiangsu
dta113zva.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) DTA113ZVA DIGITAL TRANSISTOR (PNP) FEATURE Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing
7.11. Size:306K lrc
ldta113zet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTA113ZET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist
7.12. Size:1236K kexin
dta113zca.pdf
SMD Type TransistorsDigital TransistorsDTA113ZCA (KDTA113ZCA)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete1 2 isolation to allow positive biasing of t
7.13. Size:1151K kexin
dta113zsa.pdf
DIP Type TransistorsDigital TransistorsDTA113ZSA (KDTA113ZSA)TO-92SUnit:mm4.00.12.480.2 Features45 TYP Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) 0.48 (max)0.35 (min ) The bias resistors consist of thin-film resistors with complete isolation to allow positi
7.14. Size:1199K kexin
dta113zua.pdf
SMD Type TransistorsDigital TransistorsDTA113ZUA (KDTA113ZUA) Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost complet
7.15. Size:1233K kexin
dta113ze.pdf
SMD Type TransistorsDigital TransistorsDTA113ZE (KDTA113ZE )SOT-523 U nit: m m+0.11.6 -0.1 Features +0.11.0 -0.1+0.050.2 -0.05 0.150.05 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)2 1 The bias resistors consist of thin-film resistors with complete isolation
7.16. Size:207K chenmko
chdta113zegp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA113ZEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c
7.17. Size:283K chenmko
chdta113zkgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA113ZKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
7.18. Size:214K chenmko
chdta113zugp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA113ZUGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c
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