DTB123E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTB123E
Código: F12
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 39
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar DTB123E
DTB123E Datasheet (PDF)
dtb123e.pdf
SMD Type TransistorsDigital TransistorsDTB123E (KDTB123E)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)1 2 The bias resistors consist of thin-film resistors with complete+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.
pdtb123e.pdf
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dtb123ek.pdf
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chdtb123ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTB123EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
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