DTC643TK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC643TK 📄📄
Código: R03
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 20 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Ganancia de corriente contínua (hFE): 820
Encapsulados: SOT23
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DTC643TK datasheet
dtc643tk.pdf
SMD Type Transistors Digital Transistors DTC643TK (KDTC643TK) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=600mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base C 2.Emitter B 3.collector R E R=4.7k Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
chdtc643tkgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC643TKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal fo
dtc643tu.pdf
DTC643TU / DTC643TK Transistors Digital transistors (built-in resistor) DTC643TU / DTC643TK External dimensions (Unit mm) Features In addition to the features of regular digital transistors. 2.0 0.2 UMT3 1) Low saturation voltage, typically 1.3 0.1 0.9 0.1 0.65 0.65 VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these 0.2 0.7 0.1 (1) (2) transistors ideal
chdtc643tugp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC643TUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transist
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