2SB1172A Todos los transistores

SMD Type Transistors PNP Transistors 2SB1172A TO-252 Unit mm Features 6.50+0.15 -0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) 0.127 Complementary to 2SD1742A 0.80+0.1 max -0.1 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Coll

Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm Complementary to 2SD1742, 2SD742A 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 Features 2.0 0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) I type package enabling direct sold

SMD Type Transistors PNP Transistors 2SB1172 TO-252 Unit mm Features 6.50+0.15 -0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) 0.127 Complementary to 2SD1742 0.80+0.1 max -0.1 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Collec

Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Unit mm Complementary to 2SD1746 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 2.0 0.2 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the ra

Power Transistors 2SB1174 Silicon PNP epitaxial planar type For voltage switching Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 Features 2.0 0.2 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printe

Power Transistors 2SB1175 Silicon PNP epitaxial planar type For voltage switching Unit mm Complementary to 2SD1745 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 2.0 0.2 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the ra

SMD Type Transistors PNP Transistors 2SB1176 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.127 +0.1 0.80-0.1 max Complementary to 2SD1746 + 0.1 1 Base 2.3 0.60- 0.1 +0.15

SMD Type Transistors PNP Transistors 2SB1174 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emi

SMD Type Transistors PNP Transistors 2SB1175 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.127 Complementary to 2SD1745 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15