BC818A Todos los transistores

SMD Type Transistors NPN Transistors BC818A (KC818A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features For general AF applications. High collector current. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 High current gain. +0.1 1.9-0.1 Low collector-emitter saturation voltage. 1.Base Complementary PNP type available(BC808A) 2.Emitter 3.collector Absolute Maximum Ratings Ta

November 2006 BC817/BC818 tm NPN Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages 3 Complement to BC807/ BC808 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BC817 50

BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS Sutable for AF-Driver stages and low power output stages Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Emitter Voltage BC817 VCES 50 V BC818 30 V Collector Emitter Voltage BC817 VCEO 45 V BC818 25 V Emitter-Base Voltage VEB

SOT23 NPN SILICON PLANAR BC817 MEDIUM POWER TRANSISTORS BC818 ISSUE 4 june 1996 T I D T I 8 D 8 8 8 8 8 E C 8 8 8 8 8 8 B T T 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 IT II V I V V II i V I V V i V I V V I I i II I I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT

BC817K.../BC818K... NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BC817K-16 6As 1 = B 2 = E 3 = C - - - SOT23 BC817K-16W 6As 1 = B 2 = E 3 = C - - - SOT323 BC817K-25 6Bs

BC818-40L, NSVBC818-40L General Purpose Transistors NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Uni

BC818-40L, NSVBC818-40L General Purpose Transistors NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Uni

BC818-40L, NSVBC818-40L General Purpose Transistors NPN Silicon www.onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit

BC818-40LT1G General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 25 V EMITTER Collector-Base Voltage VCBO 30 V Emitter-Base Voltage VEBO 5.0 V 3 Collector Current - Continuous IC 500 mAdc THER

BC818F NPN Silicon Transistor Descriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power output stages 2 SOT-23F Complementary pair with BC808F Ordering Information Type NO. Marking Package Code PA BC818F SOT-23F Device Code hFE Rank Year

BC818 NPN Silicon Transistor Descriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low 2 power output stages SOT-23 Complementary pair with BC808 Ordering Information Type NO. Marking Package Code PA BC818 SOT-23 Device Code hFE Rank Year&Week

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N P N transistors Marking PACKAGE OUTLINE DETAILS BC817 = 6D ALL DIMENSIONS IN mm BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G Pin configuration 1 = BASE 2 =

BC818 TRANSISTOR (NPN) BC818-16 SOT-23 BC818-25 BC818-40 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V

BC818-16 BC818-25 BC818-40 SOT-23 Transistor(NPN) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V Dimen

BC817 / BC818 NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups -16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collec

SMD Type Product specification KC818W(BC818W) Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. 1 Emitter 1 Emitter 2 Base 2 Base 3 Collector 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage

SMD Type Transistors NPN Transistors BC818 (KC818) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features For general AF applications. 1 2 +0.1 High collector current. +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 High current gain. Low collector-emitter saturation voltage. 1.Base 2.Emitter Complementary PNP type available(BC808) 3.collector Absolute Maximum Ratings Ta = 2

BC817K / BC818K BC817K / BC818K Surface Mount Low Rth Si-Epi-Planar Transistors NPN NPN Si-Epi-Planar Low Rth Transistoren f r die Oberfl chenmontage Version 2011-10-26 Power dissipation Verlustleistung 500 mW 0.1 1.1 2.9 Plastic case SOT-23 0.4 3 Kunststoffgeh use (TO-236) Type Weight approx. Gewicht ca. 0.01 g Code 1 2 Plastic material has UL classification 9

SUNROC BC818-16 BC818-25 SOT-23 BC818-40 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V V