BC850W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BC849W; BC850WNPN general purpose transistors1999 Apr 12Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationNPN general purpose transistors BC849W; BC850WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATI

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102BC849W; BC850WNPN general purpose transistorsProduct data sheet 1999 Apr 12Supersedes data of 1997 Jun 20 NXP Semiconductors Product data sheetNPN general purpose transistors BC849W; BC850WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3

NPN Silicon AF Transistor BC 846 W ... BC 850 WFeatures For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,BC 858 W,BC 859 W,BC 860 W (PNP)Type Marking Ordering code Pin Configuration Package(tape and reel) 1 2 3B E CBC 846 AW 1 As Q62702-C2319 SO

SMD Type TransistorsNPN TransistorsBC849W ~ BC850W(KC849W ~ KC850W) Features Low current (max. 100 mA) Low voltage (max. 45 V). Complements to BC859W/BC860WC1.Base2.EmitterB3.CollectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC849W 30 Collector - Base Voltage VCBOBC850W 50BC849W 30 V Collector - Emitter Voltage VC

BC846W-BC850WNPN Silicon Epitaxial Planar Transistorfor general purpose and switching applicationsOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Voltage

BC846WBC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Vol

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846AWT1/DGeneral Purpose TransistorsBC846AWT1,BWT1NPN SiliconBC847AWT1,BWT1,COLLECTOR CWT1These transistors are designed for general purpose amplifier3BC848AWT1,BWT1,applications. They are housed in the SOT323/SC70 which isdesigned for low power surface mount applications.CWT11BASE2EMITTERMAX

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846ALT1/DBC846ALT1,BLT1General Purpose TransistorsBC847ALT1,NPN SiliconCOLLECTORBLT1,CLT1 thru3BC850ALT1,BLT1,1 CLT1BASEBC846, BC847 and BC848 areMotorola Preferred Devices2EMITTERMAXIMUM RATINGSBC847 BC848BC850 BC849Rating Symbol BC846 Unit3CollectorEmitter Voltage VCEO 65 45 30 V1C

DISCRETE SEMICONDUCTORS DATA SHEETBC849; BC850NPN general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 08 NXP Semiconductors Product data sheetNPN general purpose transistors BC849; BC850FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector General purpos

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC849; BC850NPN general purpose transistors1999 Apr 08Product specificationSupersedes data of 1998 Aug 06Philips Semiconductors Product specificationNPN general purpose transistors BC849; BC850FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS

April 2011BC846 - BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC8502 Complement to BC856 ... BC860SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Coll

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

NPN EPITAXIALBC846/847/848/849/850 SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC849, BC850 Complement to BC856 ... BC860ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Base Voltage VCBO:BC846 80 V:BC847/850 50 V:BC848/849 30 VCollector E

NPN Silicon AF Transistors BC 846 ... BC 850Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,BC 859, BC 860 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 846 A 1As Q62702-C1772 B E C SOT-23BC 846 B 1Bs Q6

BC846 BC847SOT23 NPN SILICON PLANAR BC848 BC849GENERAL PURPOSE TRANSISTORSBC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 EC 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHAR

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

BC847...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC847BL3 is not qualified according AEC Q101Type Marking Pin

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

General PurposeTransistorsNPN SiliconBC846ALT1G SeriesFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

BC846 / BC847 / BC848 / BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise: BC8502 Complement to BC856, BC857, BC858, BC859, and BC860SOT-2311. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Marking Package Packing MethodBC846AMTF 8A

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc

SEMICONDUCTOR BC849/850TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .EL B LFEATURESDIM MILLIMETERSFor Complementary With PNP Type BC859/860._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.

BC846A/B-BC847A/B/CBC848A/B/C-BC849B/CBC850B/CGeneral Purpose TransistorNPN Silicon COLLECTOR3MARKING DIAGRAM33XX = Device11 Code (See2BASE Table Below)SOT-23*Moisture Sensitivity Level: 11 2*ESD Rating - Human Body Model:>4000V 2EMITTER -Machine Model:>400V( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emi

BC8 6A/BLT1FM120-M BC8 7A/B/CLT1WILLASTHRUBC8 8A/B/CLT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose Transistors SOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface

BC846BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC846AWT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO VdcSOT323 /SC70

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC846ALT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.31MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO VdcSOT23LBC846 6

SEMICONDUCTORBC846S ~BC850STECHNICAL DATAGeneral Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 V3 Machine Model: >400 V21MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage VCEO VdcBC846 65BC847, BC850 45BC848, BC849 303COLLECTORCollectorBase Voltage VCBO VdcBC846

SMD Type TransistorsNPN TransistorsBC849~BC850 (KC849~KC850)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 45 V). PNP complements: BC859 and BC860. 1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

BC846AW ~ BC850CWNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWERVOLTAGE 250 mWattFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per

BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES General purpose amplifier applications0.120(3.04)0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20

BC846AW-AU ~ BC850CW-AUNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWER 250 mWattVOLTAGEFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic

BC846,BC847,BC848,BC849,BC850 SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES0.120(3.04) General purpose amplifier applications0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. .0.056(1.40) (Ha

BC849-BC850NPN Transistors321.BaseFeatures2.EmitterLow current (max. 100 mA)1 3.CollectorLow voltage (max. 45 V). Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit30 Vcollector-base voltage VCBO50 V30 Vcollector-emitter voltage VCEO45 Vemitter-base voltage VEBO 5Vcollector current (DC) IC 100 mApeak collector curr

BC849--BC850NPN General Purpose TransistorsNPN General Purpose Transistors BC849, BC850 Features Low current (max. 100 mA) Low voltage (max. 45 V). REV.08 1 of 2BC849--BC850Electrical Characteristics Ta = 25 *1 VBEsat decreases by about 1.7 mV/K with increasing temperature.decreases by about 1.7 mV/K with increasing temperature. *2 VBE decreases by about 2 mV/K wi

BC846/847/848/849/850 TRANSISTORNPNFEATURES Low current (max. 100 mA) Low voltage (max. 65 V).APPLICATIONS General purpose switching and amplification.1.Base 2.Emitter 3.Collector DESCRIPTIONSOT-23 Plastic PackageNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Symbol Val

BC846-BC850BC846/847/848/849/850 TRANSISTORNPNFEATURESSOT-23 Low current (max. 100 mA) Low voltage (max. 65 V).1BASE 2EMITTER APPLICATIONS3COLLECTOR General purpose switching and amplification.DESCRIPTIONNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Sy

BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC8 46 THRU BC8 50TRANSISTOR(NPN)FEATURE Low current (max. 100 mA)SOT-23 Low voltage (max. 65 V).1BASE APPLICATIONS2EMITTER General purpose switching and amplification. 3COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/86

BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC856...BC860 is recommended.1.Base 2.Emitter 3.Collector SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Units Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collec